Semi-Insulating Silicon Carbide (SiC) Substrate High-Purity ya Magalasi a Ar

Semi-Insulating Silicon Carbide (SiC) Substrate High-Purity for Ar Glasses Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Ma substrates a silicon carbide (SiC) opangidwa ndi silicon carbide (High-purity semi-insulating substrates) ndi zipangizo zapadera zopangidwa kuchokera ku silicon carbide, zomwe zimagwiritsidwa ntchito kwambiri popanga zamagetsi amphamvu, zida zama radio frequency (RF), ndi zigawo za semiconductor zotentha kwambiri. Silicon carbide, monga chipangizo cha semiconductor chopanda bandgap, imapereka mphamvu zabwino zamagetsi, kutentha, ndi makina, zomwe zimapangitsa kuti ikhale yoyenera kugwiritsidwa ntchito m'malo okhala ndi magetsi ambiri, ma frequency ambiri, komanso kutentha kwambiri.

Tumizani imelo kwa ife

Mawonekedwe

Chithunzi Chatsatanetsatane

Chidule cha Zamalonda za Ma Wafers a SiC Osateteza Zinthu Zina

Ma Wafer a SiC Oyera Kwambiri Okhala ndi Zinthu Zoteteza Thupi (High-Purity Semi-Insulating) amapangidwira zamagetsi apamwamba, zida za RF/microwave, ndi ntchito za optoelectronic. Ma Wafer awa amapangidwa kuchokera ku makristalo apamwamba a 4H- kapena 6H-SiC single, pogwiritsa ntchito njira yokulira ya Physical Vapor Transport (PVT), kutsatiridwa ndi kupondereza kwa deep-level compensation. Zotsatira zake ndi wafer yokhala ndi zinthu zotsatirazi:

Kusakhazikika Kwambiri: ≥1×10¹² Ω·cm, kuchepetsa bwino mafunde otuluka muzipangizo zosinthira zamagetsi amphamvu.
Chigawo Chokulirapo cha Bandgap (~3.2 eV): Imatsimikizira kuti imagwira ntchito bwino kwambiri m'malo otentha kwambiri, m'malo otentha kwambiri, komanso m'malo omwe muli ma radiation ambiri.
Kutentha Kwambiri Kwambiri: >4.9 W/cm·K, zomwe zimathandiza kuyeretsa bwino kutentha pogwiritsa ntchito mphamvu zambiri.
Mphamvu Zapamwamba Zamakina: Ndi kuuma kwa Mohs kwa 9.0 (kwachiwiri pambuyo pa diamondi), kutentha kochepa, komanso kukhazikika kwamphamvu kwa mankhwala.
Malo Osalala a Atomiki: Ra < 0.4 nm ndi kachulukidwe ka chilema < 1/cm², yoyenera kwambiri popanga MOCVD/HVPE epitaxy ndi micro-nano.

Masayizi Opezeka: Makulidwe wamba akuphatikizapo 50, 75, 100, 150, ndi 200 mm (2"–8"), ndipo pali ma diameter opangidwa mwamakonda mpaka 250 mm.
Makulidwe osiyanasiyana: 200–1,000 μm, yokhala ndi kulekerera kwa ±5 μm.

Njira Yopangira Ma Wafers a SiC Osateteza Zinthu Zina

Kukonzekera Ufa wa SiC Woyera Kwambiri

Zinthu Zoyambira: Ufa wa SiC wa kalasi 6N, woyeretsedwa pogwiritsa ntchito njira zambiri zoyeretsera mpweya ndi kutentha, kuonetsetsa kuti zitsulo sizikuipitsidwa kwambiri (Fe, Cr, Ni <10 ppb) komanso polycrystalline inclusions zochepa.

Kukula kwa PVT Yosinthidwa ya Single-Crystal

Zachilengedwe: Pafupi ndi vacuum (10⁻³–10⁻² Torr).
Kutentha: Chophikira cha grafiti chomwe chimatenthedwa mpaka ~2,500 °C ndi kutentha kolamulidwa kwa ΔT ≈ 10–20 °C/cm.
Kuyenda kwa Gasi ndi Kapangidwe ka Crucible: Zolekanitsa zopingasa ndi zoboola zimatsimikizira kufalikira kwa nthunzi mofanana ndikuletsa nucleation yosafunikira.
Kudyetsa ndi Kuzungulira kwa Mphamvu: Kubwezeretsanso ufa wa SiC ndi kuzungulira kwa kristalo-ndodo nthawi ndi nthawi kumapangitsa kuti pakhale kusinthasintha kochepa kwa mpweya (<3,000 cm⁻²) komanso kusinthasintha kwa 4H/6H.

Kulipira Kwambiri Kwambiri

Hydrogen Anneal: Zimachitidwa mumlengalenga wa H₂ pa kutentha pakati pa 600–1,400 °C kuti ziyambe kugwira ntchito m'misewu yozama ndikukhazikitsa zonyamulira zamkati.
Kugwiritsira Ntchito Mankhwala Ochepetsa Mphamvu (N/Al): Kuphatikizidwa kwa Al (wolandira) ndi N (wopereka) panthawi ya kukula kapena pambuyo pa kukula kwa CVD kuti apange mawiri okhazikika a wopereka-wolandira, zomwe zimapangitsa kuti pakhale zovuta zotsutsana.

Kudula Moyenera & Kuluka Mozungulira Magawo Ambiri

Kudula ndi Waya wa Daimondi: Ma wafer odulidwa mpaka makulidwe a 200–1,000 μm, osawonongeka kwambiri komanso osalekerera ±5 μm.
Njira Yolumikizirana: Zokometsera za diamondi zozungulira mpaka zopyapyala zimachotsa kuwonongeka kwa macheka, ndikukonzekeretsa wafer kuti ipukutidwe.

Kupukuta kwa Makina a Mankhwala (CMP)

Zoulutsira Nkhani: Nano-oxide (SiO₂ kapena CeO₂) slurry mu yankho lofatsa la alkaline.
Kuwongolera Njira: Kupukuta kocheperako kumachepetsa kukhwinyata, zomwe zimapangitsa kuti RMS ikhale yokhwinyata ya 0.2–0.4 nm ndikuchotsa kukhwinyata pang'ono.

Kuyeretsa Komaliza ndi Kulongedza

Kuyeretsa kwa Ultrasonic: Njira yoyeretsera yochitika m'njira zambiri (zosungunulira zachilengedwe, mankhwala a asidi/maziko, ndi kutsuka ndi madzi osasungunuka) m'chipinda choyera cha Class-100.
Kusindikiza & Kulongedza: Kuumitsa kwa mawaya ndi kutsuka kwa nayitrogeni, kotsekedwa m'matumba oteteza odzazidwa ndi nayitrogeni ndikuyikidwa m'mabokosi akunja oletsa kugwedezeka komanso oletsa kugwedezeka.

Mafotokozedwe a Ma Wafers a Semi-Insulating SiC

Magwiridwe Antchito a Zamalonda	Giredi P	Giredi D
I. Ma Crystal Parameters	I. Ma Crystal Parameters	I. Ma Crystal Parameters
Mtundu wa Crystal Polytype	4H	4H
Chizindikiro Chowunikira a	>2.6 @589nm	>2.6 @589nm
Mlingo wa Kuyamwa a	≤0.5% @450-650nm	≤1.5% @450-650nm
Kutumiza kwa MP (Kopanda utoto)	≥66.5%	≥66.2%
Haze a	≤0.3%	≤1.5%
Kuphatikiza kwa Polytype a	Sizololedwa	Malo osonkhanitsidwa ≤20%
Kuchuluka kwa mapaipi a Micropipe	≤0.5 /cm²	≤2 /cm²
Hexagonal Void a	Sizololedwa	N / A
Kuphatikizidwa kwa Mawonekedwe a	Sizololedwa	N / A
Kuphatikizidwa kwa MP	Sizololedwa	N / A
II. Magawo a Makina	II. Magawo a Makina	II. Magawo a Makina
M'mimba mwake	150.0 mm +0.0 mm / -0.2 mm	150.0 mm +0.0 mm / -0.2 mm
Kuyang'ana Pamwamba	{0001} ±0.3°	{0001} ±0.3°
Utali Woyamba Wathyathyathya	Chingwe	Chingwe
Utali Wachiwiri Wathyathyathya	Palibe nyumba yachiwiri	Palibe nyumba yachiwiri
Kuyang'ana kwa Notch	<1-100> ±2°	<1-100> ±2°
Ngodya ya Notch	90° +5° / -1°	90° +5° / -1°
Kuzama kwa Notch	1 mm kuchokera m'mphepete +0.25 mm / -0.0 mm	1 mm kuchokera m'mphepete +0.25 mm / -0.0 mm
Chithandizo cha Pamwamba	C-face, Si-face: Chemo-Mechanical Polishing (CMP)	C-face, Si-face: Chemo-Mechanical Polishing (CMP)
Mphepete mwa Wafer	Chamfered (Yozungulira)	Chamfered (Yozungulira)
Kukhwima kwa Pamwamba (AFM) (5μm x 5μm)	Si-nkhope, C-nkhope: Ra ≤ 0.2 nm	Si-nkhope, C-nkhope: Ra ≤ 0.2 nm
Kukhuthala kwa (Tropel)	500.0 μm ± 25.0 μm	500.0 μm ± 25.0 μm
LTV (Tropel) (40mm x 40mm) a	≤ 2 μm	≤ 4 μm
Kusiyanasiyana Kwa Makulidwe Onse (TTV) a (Tropel)	≤ 3 μm	≤ 5 μm
Bow (Absolute Value) a (Tropel)	≤ 5 μm	≤ 15 μm
Warp a (Tropel)	≤ 15 μm	≤ 30 μm
3. Magawo a pamwamba	3. Magawo a pamwamba	3. Magawo a pamwamba
Chip/Notch	Sizololedwa	≤ Ma PC awiri, kutalika ndi m'lifupi chilichonse ≤ 1.0 mm
Kandani (Si-face, CS8520)	Kutalika konse ≤ 1 x M'mimba mwake	Kutalika konse ≤ 3 x M'mimba mwake
Tinthu tating'onoting'ono a (Si-face, CS8520)	≤ 500 ma PC	N / A
Mng'alu	Sizololedwa	Sizololedwa
Kuipitsidwa ndi	Sizololedwa	Sizololedwa

Kugwiritsa Ntchito Kofunika Kwambiri kwa Ma Wafers a Semi-Insulating SiC

Zamagetsi Zamphamvu Kwambiri: Ma MOSFET okhala ndi SiC, ma diode a Schottky, ndi ma module amphamvu zamagalimoto amagetsi (EV) amapindula ndi mphamvu zochepa za SiC zotsutsa komanso mphamvu zamagetsi apamwamba.
RF & Maikulowevu: Kugwira ntchito kwa SiC kwa ma frequency apamwamba komanso kukana kwa radiation ndikwabwino kwambiri pa ma amplifiers a 5G base-station, ma radar module, ndi kulumikizana kwa satellite.
Zipangizo zamagetsiMa LED a UV, ma diode a blue-laser, ndi ma photodetector amagwiritsa ntchito ma substrates a SiC osalala bwino kuti azitha kukula mofanana.
Kuzindikira Zachilengedwe KwambiriKukhazikika kwa SiC pa kutentha kwambiri (>600 °C) kumapangitsa kuti ikhale yoyenera masensa m'malo ovuta, kuphatikizapo ma turbine a gasi ndi zida zoyesera nyukiliya.
Ndege ndi ChitetezoSiC imapereka kulimba kwa magetsi amagetsi m'ma satellite, machitidwe a zida zankhondo, ndi zamagetsi a ndege.
Kafukufuku Wapamwamba: Mayankho apadera a quantum computing, micro-optics, ndi ntchito zina zapadera zofufuzira.

Mafunso Ofunsidwa Kawirikawiri

Chifukwa chiyani SiC yokhala ndi semi-insulation kuposa SiC yoyendetsa?
SiC yoteteza kutentha pang'ono imapereka mphamvu yochulukirapo, zomwe zimachepetsa mphamvu yotulutsa madzi m'zida zamagetsi amphamvu komanso zama frequency apamwamba. SiC yoyendetsa magetsi ndi yoyenera kwambiri kugwiritsa ntchito komwe kumafunika mphamvu zamagetsi.
Kodi ma wafer awa angagwiritsidwe ntchito pakukula kwa epitaxial?
Inde, ma wafer awa ndi okonzeka kugwiritsidwa ntchito ndi MOCVD, HVPE, kapena MBE, ndipo ali ndi mankhwala ochizira pamwamba komanso kuwongolera zolakwika kuti atsimikizire kuti epitaxial layer ndi yabwino kwambiri.
Kodi mumaonetsetsa bwanji kuti wafer ndi yoyera?
Njira yoyeretsera chipinda cha Class-100, kuyeretsa kwa ultrasound kwa masitepe ambiri, ndi kuyika ma nitrogen-sealed kumatsimikizira kuti ma wafers alibe zodetsa, zotsalira, komanso mikwingwirima yaying'ono.
Kodi nthawi yoperekera maoda ndi iti?
Zitsanzo nthawi zambiri zimatumizidwa mkati mwa masiku 7-10 ogwira ntchito, pomwe maoda opangira nthawi zambiri amaperekedwa mkati mwa masabata 4-6, kutengera kukula kwa wafer ndi mawonekedwe apadera.
Kodi mungapereke mawonekedwe apadera?
Inde, tikhoza kupanga zinthu zopangidwa mwamakonda m'mawonekedwe osiyanasiyana monga mawindo ozungulira, ma V-grooves, magalasi ozungulira, ndi zina zambiri.

Zambiri zaife

XKH imagwira ntchito kwambiri pakupanga, kupanga, ndi kugulitsa magalasi apadera a kuwala ndi zinthu zatsopano zamakristalo. Zogulitsa zathu zimapereka zinthu zamagetsi, zamagetsi, ndi zankhondo. Timapereka zinthu za Sapphire optical, zophimba ma lens a foni yam'manja, Ceramics, LT, Silicon Carbide SIC, Quartz, ndi ma crystal wafers a semiconductor. Ndi ukatswiri waluso komanso zida zamakono, timachita bwino kwambiri pokonza zinthu zosakhazikika, cholinga chathu ndi kukhala kampani yotsogola kwambiri yaukadaulo wamagetsi.