Zida Zofunika Kwambiri Zopangira Semiconductor: Mitundu ya Magawo a Wafer

Ma Wafer Substrates ngati Zida Zofunika Kwambiri pazida za Semiconductor

Magawo a Wafer ndi omwe amanyamulira zida za semiconductor, ndipo mawonekedwe ake amatsimikizira momwe chipangizocho chimagwirira ntchito, mtengo wake, ndi magawo ogwiritsira ntchito. M'munsimu muli mitundu ikuluikulu ya magawo opangira mkate pamodzi ndi ubwino ndi kuipa kwawo:


1.Silicon (Si)

  • Machitidwe pamsika:Amawerengera opitilira 95% pamsika wapadziko lonse lapansi wa semiconductor.

  • Ubwino:

    • Mtengo wotsika:Zopangira zambiri (silicon dioxide), njira zopangira okhwima, komanso chuma champhamvu chambiri.

    • Kugwirizana kwakukulu kwa ndondomeko:Ukadaulo wa CMOS ndiwokhwima kwambiri, umathandizira ma node apamwamba (mwachitsanzo, 3nm).

    • Ubwino wa kristalo wabwino kwambiri:Zophika zazitali zazikulu (makamaka 12-inch, 18-inch pansi pa chitukuko) zokhala ndi kachulukidwe kochepa zimatha kukulitsidwa.

    • Zokhazikika zamakina:Zosavuta kudula, kupukuta, ndikugwira.

  • Zoyipa:

    • Bandgap yopapatiza (1.12 eV):Mkulu kutayikira panopa pa kutentha okwera, kuchepetsa mphamvu chipangizo mphamvu.

    • Indirect bandgap:Kuwala kotsika kwambiri, kosayenera kwa zida za optoelectronic monga ma LED ndi ma laser.

    • Ma electron ochepa kuyenda:Kuchita kocheperako kocheperako poyerekeza ndi ma semiconductors apawiri.
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2.Gallium Arsenide (GaAs)

  • Mapulogalamu:Zipangizo za RF zothamanga kwambiri (5G / 6G), zida za optoelectronic (lasers, maselo a dzuwa).

  • Ubwino:

    • Ma electron apamwamba (5-6 × a silicon):Oyenera kuthamanga kwambiri, maulendo apamwamba kwambiri monga mauthenga a millimeter-wave.

    • Direct bandgap (1.42 eV):Kutembenuka kwamphamvu kwazithunzi zazithunzi, maziko a ma lasers a infrared ndi ma LED.

    • Kutentha kwakukulu ndi kukana kwa radiation:Oyenera mlengalenga komanso malo ovuta.

  • Zoyipa:

    • Mtengo wapamwamba:Zinthu zochepa, kukula kwa kristalo kovuta (kosavuta kusuntha), kukula kochepa (makamaka 6-inch).

    • Brittle mechanics:sachedwa kuthyoka, chifukwa otsika processing zokolola.

    • Kawopsedwe:Arsenic imafuna kusamalidwa kokhazikika komanso kuwongolera chilengedwe.

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3. Silicon Carbide (SiC)

  • Mapulogalamu:Zida zamagetsi zotentha kwambiri komanso zamphamvu kwambiri (ma EV inverters, malo ojambulira), zakuthambo.

  • Ubwino:

    • Bandgap (3.26 eV):Mphamvu yosweka kwambiri (10 × ya silicon), kulekerera kutentha kwambiri (kutentha kogwira ntchito> 200 ° C).

    • Kutentha kwapamwamba (≈3 × silicon):Kutentha kwabwino kwambiri, kumapangitsa kuti kachulukidwe kamphamvu kakachuluke.

    • Kutaya kosinthira kochepa:Kumawonjezera mphamvu kutembenuka kwachangu.

  • Zoyipa:

    • Kukonzekera kwa gawo lapansi kovuta:Kukula pang'onopang'ono kwa kristalo (> 1 sabata), kuwongolera zolakwika zovuta (ma micropipes, dislocations), mtengo wokwera kwambiri (5-10 × silicon).

    • Kukula kochepa kwa mkate:Makamaka 4-6 inchi; 8-inch akadali pakukula.

    • Zovuta kukonza:Zovuta kwambiri (Mohs 9.5), kupanga kudula ndi kupukuta kumatenga nthawi.

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4. Gallium Nitride (GaN)

  • Mapulogalamu:Zipangizo zamagetsi zothamanga kwambiri (kuthamangitsa mwachangu, masiteshoni oyambira a 5G), ma LED / ma laser a buluu.

  • Ubwino:

    • Kusuntha kwa ma elekitironi apamwamba kwambiri + bandgap (3.4 eV):Amaphatikiza ma frequency apamwamba (> 100 GHz) ndi magwiridwe antchito apamwamba kwambiri.

    • Kukana kutsika:Amachepetsa mphamvu ya chipangizo.

    • Zogwirizana ndi Heteroepitaxy:Amalimidwa pa silicon, safiro, kapena masinthidwe a SiC, kuchepetsa mtengo.

  • Zoyipa:

    • Kukula kwa kristalo wambiri kumakhala kovuta:Heteroepitaxy ndiyofala, koma kusalingana kwa lattice kumabweretsa zolakwika.

    • Mtengo wapamwamba:Magawo a Native GaN ndi okwera mtengo kwambiri (wophika wa 2-inchi ukhoza kuwononga madola masauzande angapo).

    • Zovuta zodalirika:Zochitika monga kugwa kwapano zimafuna kukhathamiritsa.

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5. Indium Phosphide (InP)

  • Mapulogalamu:Kulumikizana kothamanga kwambiri (ma lasers, photodetectors), zida za terahertz.

  • Ubwino:

    • Ma electron apamwamba kwambiri:Imathandizira> 100 GHz ntchito, yoposa ma GaAs.

    • Direct bandgap yokhala ndi kutalika kwa mafunde:Zinthu zazikuluzikulu za 1.3-1.55 μm zolumikizana ndi fiber fiber.

  • Zoyipa:

    • Zosavuta komanso zokwera mtengo kwambiri:Mtengo wa substrate umaposa 100 × silicon, kukula kwake kochepa (4-6 inchi).

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6. Sapphire (Al₂O₃)

  • Mapulogalamu:Kuwala kwa LED (GaN epitaxial substrate), galasi lophimba lamagetsi ogula.

  • Ubwino:

    • Mtengo wotsika:Ndiotsika mtengo kwambiri kuposa magawo a SiC/GaN.

    • Kukhazikika kwamphamvu kwamankhwala:Zosagwirizana ndi dzimbiri, zimateteza kwambiri.

    • Kuwonekera:Yoyenera kuyika mawonekedwe a LED.

  • Zoyipa:

    • Kusagwirizana kwakukulu kwa latisi ndi GaN (> 13%):Zimayambitsa kachulukidwe kakang'ono, zomwe zimafuna zigawo za buffer.

    • Kusayenda bwino kwamafuta (~ 1/20 ya silicon):Imachepetsa magwiridwe antchito a ma LED amphamvu kwambiri.

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7. Ceramic Substrates (AlN, BeO, etc.)

  • Mapulogalamu:Zotulutsa kutentha kwa ma module amphamvu kwambiri.

  • Ubwino:

    • Insulating + mkulu matenthedwe conductivity (AlN: 170–230 W/m·K):Oyenera kulongedza katundu wambiri.

  • Zoyipa:

    • Non-single-crystal:Sitingathe kuthandizira kukula kwa chipangizocho, chomwe chimagwiritsidwa ntchito ngati zoyikapo zokha.

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8. Magawo apadera

  • SOI (Silicon pa Insulator):

    • Kapangidwe:Silicon/SiO₂/sangweji ya silicon.

    • Ubwino:Amachepetsa mphamvu ya parasitic, kuuma kwa ma radiation, kuponderezedwa kwamadzimadzi (omwe amagwiritsidwa ntchito mu RF, MEMS).

    • Zoyipa:30-50% yokwera mtengo kuposa silicon yambiri.

  • Quartz (SiO₂):Ntchito photomasks ndi MEMS; kukana kutentha kwambiri koma kolimba kwambiri.

  • Daimondi:Malo otenthetsera kwambiri (>2000 W/m·K), pansi pa R&D pochotsa kutentha kwambiri.

 

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Kuyerekeza Chidule Table

Gawo lapansi Bandgap (eV) Electron Mobility (cm²/V·s) Thermal Conductivity (W/m·K) Main Wafer Kukula Mapulogalamu a Core Mtengo
Si 1.12 ~1,500 ~ 150 12-inchi Logic / Memory Chips Chotsikitsitsa
Gas 1.42 ~8,500 ~55 4-6 inchi RF / Optoelectronics Wapamwamba
SiC 3.26 ~900 ~ 490 6-inch (8-inch R&D) Zida zamagetsi / EV Wapamwamba kwambiri
GaN 3.4 ~2,000 ~ 130-170 4-6 inchi (heteroepitaxy) Kuthamanga mwachangu / RF / ma LED Pamwamba (heteroepitaxy: medium)
InP 1.35 ~5,400 ~70 4-6 inchi Kulumikizana kwa Optical / THz Wapamwamba Kwambiri
Safira 9.9 (zoteteza) - ~40 4-8 inchi Magetsi a LED Zochepa

Zofunika Kwambiri pakusankha gawo lapansi

  • Zofunikira pakuchita:GaAs / InP kwa maulendo apamwamba; SiC kwa high-voltage, mkulu-kutentha; GaAs/InP/GaN ya optoelectronics.

  • Zolepheretsa:Zamagetsi ogula amakonda silicon; minda yapamwamba imatha kulungamitsa malipiro a SiC/GaN.

  • Kuphatikiza zovuta:Silicon imakhalabe yosasinthika kuti igwirizane ndi CMOS.

  • Kasamalidwe ka kutentha:Mapulogalamu amphamvu kwambiri amakonda SiC kapena GaN yochokera ku diamondi.

  • Kukhwima kwa chain chain:Si > Sapphire > GaAs > SiC > GaN > InP.


Future Trend

Kuphatikizika kosiyanasiyana (mwachitsanzo, GaN-on-Si, GaN-on-SiC) kudzalinganiza magwiridwe antchito ndi mtengo, kuyendetsa patsogolo mu 5G, magalimoto amagetsi, ndi computing ya quantum.


Nthawi yotumiza: Aug-21-2025