6 Inchi 4H SEMI Type SiC composite substrate Kukhuthala 500μm TTV≤5μm MOS grade

Kufotokozera Kwachidule:

Ndi kupita patsogolo mwachangu kwa ukadaulo wa 5G wolumikizirana ndi radar, gawo lokhala ndi SiC lokhala ndi mainchesi 6 lakhala chinthu chofunikira kwambiri popanga zida zama frequency apamwamba. Poyerekeza ndi magawo achikhalidwe a GaAs, gawoli limasunga kukana kwakukulu (>10⁸Ω·cm) pomwe likuwongolera kuyendetsa bwino kutentha ndi nthawi zoposa 5, kuthana ndi mavuto otaya kutentha m'zida zama millimeter-wave. Ma amplifier amphamvu mkati mwa zida zatsiku ndi tsiku monga mafoni a m'manja a 5G ndi malo olumikizirana a satellite mwina amamangidwa pa gawoli. Pogwiritsa ntchito ukadaulo wathu wa "buffer layer doping compensation", tachepetsa kuchuluka kwa ma micropipe kufika pansi pa 0.5/cm² ndipo tapeza kutayika kochepa kwambiri kwa microwave kwa 0.05 dB/mm.

Tumizani imelo kwa ife

Mawonekedwe

Magawo aukadaulo

Zinthu	Kufotokozera	Zinthu	Kufotokozera
M'mimba mwake	150±0.2 mm	Kukhwima kwa nkhope (kutsogolo)	Ra≤0.2 nm (5μm×5μm)
Mtundu wa Polytype	4H	Chip ya Edge, Kukanda, Kusweka (kuyang'ana kowoneka)	Palibe
Kusakhazikika	≥1E8 Ω·cm	TTV	≤5 μm
Kusamutsa wosanjikiza makulidwe	≥0.4 μm	Kupindika	≤35 μm
Chopanda kanthu (2mm>D>0.5mm)	≤5 pa/Wafer	Kukhuthala	500±25 μm

Zinthu Zofunika Kwambiri

1. Kugwira Ntchito Kwambiri Kwambiri
Chigawo cha SiC chokhala ndi ma inchi 6 chimagwiritsa ntchito kapangidwe ka dielectric layer kokonzedwa bwino, kuonetsetsa kuti dielectric ikusintha mosalekeza kwa <2% mu Ka-band (26.5-40 GHz) ndikuwonjezera kusinthasintha kwa gawo ndi 40%. Kuwonjezeka kwa 15% mu magwiridwe antchito ndi 20% kutsika kwa mphamvu zomwe zimagwiritsidwa ntchito mu T/R modules pogwiritsa ntchito gawo ili.

2. Kuyang'anira Kutentha Kwambiri
Kapangidwe kapadera ka "mlatho wotentha" kamathandizira kuti kutentha kwa mbali kuyendetsedwe ndi 400 W/m·K. Mu ma module a PA a 28 GHz 5G base station, kutentha kwa junction kumakwera ndi 28°C kokha pambuyo pa maola 24 ogwira ntchito mosalekeza—50°C yocheperapo kuposa mayankho wamba.

3. Ubwino Wapamwamba Wa Wafer
Kudzera mu njira yabwino kwambiri yoyendetsera nthunzi ya thupi (PVT), timapeza kuchuluka kwa dislocation <500/cm² ndi Total Thickness Variation (TTV) <3 μm.
4. Kukonza Kosavuta Kupanga
Njira yathu yopangira laser annealing yomwe idapangidwira makamaka gawo la SiC composite la mainchesi 6 imachepetsa kuchuluka kwa pamwamba ndi magulu awiri a kukula kwake isanafike epitaxy.

Mapulogalamu Aakulu

1. Zigawo zapakati za 5G Base Station
Mu ma antenna a MIMO akuluakulu, zida za GaN HEMT zomwe zili pa ma substrates a SiC okhala ndi semi-insulating 6-inch zimapeza mphamvu yotulutsa ya 200W komanso mphamvu yoposa 65%. Mayeso a pa 3.5 GHz adawonetsa kuwonjezeka kwa 30% mu radius yophimba.

2. Machitidwe Olumikizirana a Satellite
Ma transceivers a satellite a Low-Earth orbit (LEO) omwe amagwiritsa ntchito substrate iyi akuwonetsa EIRP yokwera ndi 8 dB mu Q-band (40 GHz) pomwe akuchepetsa kulemera ndi 40%. Ma terminal a SpaceX Starlink agwiritsa ntchito izi popanga zinthu zambiri.

3. Makina a Radar a Asilikali
Ma module a T/R a radar opangidwa ndi magawo atatu pa substrate iyi amakwaniritsa bandwidth ya 6-18 GHz ndipo phokoso limakhala lotsika kufika pa 1.2 dB, zomwe zimapangitsa kuti pakhale mtunda wozindikira ndi makilomita 50 mu makina a radar ochenjeza msanga.

4. Rada ya Magalimoto ya Millimeter-Wave
Ma chips a radar a magalimoto a 79 GHz omwe amagwiritsa ntchito substrate iyi amawongolera mawonekedwe a angular kufika pa 0.5°, zomwe zimakwaniritsa zofunikira pa kuyendetsa kwa L4.

Timapereka njira yokwanira yogwirira ntchito yopangira zinthu zopangidwa ndi SiC zokhala ndi mainchesi 6. Ponena za kusintha magawo a zinthu, timathandizira kulamulira kolondola kwa resistivity mkati mwa 10⁶-10¹⁰ Ω·cm. Makamaka pa ntchito zankhondo, titha kupereka njira yolimba kwambiri ya >10⁹ Ω·cm. Imapereka makulidwe atatu a 200μm, 350μm ndi 500μm nthawi imodzi, ndi kulekerera komwe kumayendetsedwa mosamala mkati mwa ±10μm, kukwaniritsa zofunikira zosiyanasiyana kuyambira pazida zama frequency apamwamba mpaka kugwiritsa ntchito mphamvu zambiri.

Ponena za njira zochizira pamwamba, timapereka mayankho awiri aukadaulo: Chemical Mechanical Polishing (CMP) imatha kukwaniritsa kusalala kwa pamwamba pa atomiki ndi Ra<0.15nm, kukwaniritsa zofunikira kwambiri pakukula kwa epitaxial; Ukadaulo wokonzekera pamwamba wa epitaxial wopangira zinthu mwachangu ungapereke malo osalala kwambiri okhala ndi Sq<0.3nm ndi makulidwe otsalira a oxide <1nm, zomwe zimapangitsa kuti njira yochizira isakhale yophweka kwa kasitomala.

XKH imapereka mayankho okonzedwa bwino a magawo a SiC okwana mainchesi 6 omwe amateteza kutentha kwapakati.

1. Kusintha kwa Zinthu Zofunika
Timapereka njira zowongolera mphamvu ya resistivity mkati mwa 10⁶-10¹⁰ Ω·cm, ndi njira zapadera zowongolera mphamvu ya resistivity >10⁹ Ω·cm zomwe zingagwiritsidwe ntchito pankhondo/mlengalenga.

2. Mafotokozedwe a makulidwe
Zosankha zitatu zokhazikika za makulidwe:

· 200μm (yokonzedwa bwino kuti igwiritsidwe ntchito pazida zama frequency apamwamba)

· 350μm (mafotokozedwe wamba)

· 500μm (yopangidwira ntchito zamphamvu kwambiri)
· Mitundu yonse imasunga kulekerera kolimba kwa makulidwe a ± 10μm.

3. Ukadaulo Wokhudza Kukonza Zinthu Pamwamba

Kupukuta kwa Makina Opangira Mankhwala (CMP): Kumapangitsa kuti pamwamba pakhale posalala ndi Ra<0.15nm, zomwe zimakwaniritsa zofunikira za kukula kwa epitaxial pa RF ndi zida zamagetsi.

4. Kukonza Malo Oyenera Kupangidwa ndi Epi

· Imapereka malo osalala kwambiri okhala ndi kuuma kwa Sq<0.3nm

· Imalamulira makulidwe a okosijeni achilengedwe mpaka <1nm

· Imachotsa njira zitatu zokonzekera zinthu pasadakhale pamalo osungira makasitomala