Ma Wafer a Epitaxial a 4H-SiC a MOSFET a Ultra-High Voltage (100–500 μm, mainchesi 6)

Kufotokozera Kwachidule:

Kukula mwachangu kwa magalimoto amagetsi, ma gridi anzeru, makina obwezeretsanso mphamvu, ndi zida zamafakitale zamphamvu kwambiri kwapangitsa kuti pakhale kufunikira kwakukulu kwa zida za semiconductor zomwe zimatha kugwira ntchito ndi ma voltage apamwamba, kuchuluka kwa mphamvu zambiri, komanso kugwira ntchito bwino kwambiri. Pakati pa ma semiconductors ambiri,silicon carbide (SiC)imadziwika kwambiri chifukwa cha bandgap yake yayikulu, kutentha kwambiri, komanso mphamvu yamagetsi yofunika kwambiri.

Tumizani imelo kwa ife

Mawonekedwe

Chithunzi Chatsatanetsatane

Chidule cha Zamalonda

ZathuMa wafer a epitaxial a 4H-SiCzapangidwa makamaka kutiKugwiritsa ntchito MOSFET yamagetsi amphamvu kwambiriNdi zigawo za epitaxial kuyambira100 μm mpaka 500 μm on Ma substrate a mainchesi 6 (150 mm), ma wafer awa amapereka madera otambalala ofunikira pazida zamtundu wa kV pomwe amasunga mtundu wabwino kwambiri wa kristalo komanso kufalikira kwake. Makulidwe wamba akuphatikizapo 100 μm, 200 μm, ndi 300 μm, ndipo amatha kusinthidwa.

Kukhuthala kwa Epitaxial Layer

Gawo la epitaxial limagwira ntchito yofunika kwambiri pakutsimikiza magwiridwe antchito a MOSFET, makamaka mulingo pakati pamagetsi oswekandiosalimba.

100–200 μm: Yakonzedwa bwino kuti igwiritsidwe ntchito ndi ma MOSFET apakati mpaka okwera, zomwe zimapangitsa kuti ikhale yogwira bwino ntchito komanso kuti ikhale yolimba.
200–500 μm: Yoyenera zipangizo zamagetsi amphamvu kwambiri (10 kV+), zomwe zimathandiza kuti madera akutali azigwedezeka kuti azitha kusweka bwino.

Kuzungulira zonse,Kufanana kwa makulidwe kumayendetsedwa mkati mwa ± 2%, kuonetsetsa kuti chipangizocho chikugwirizana kuyambira pa wafer kupita pa wafer ndi batch kupita pa batch. Kusinthasintha kumeneku kumathandiza opanga kukonza magwiridwe antchito a chipangizocho kuti chigwirizane ndi magulu awo amagetsi omwe akufuna komanso kusunga kubwerezabwereza popanga zinthu zambiri.

Njira Yopangira

Ma wafer athu amapangidwa pogwiritsa ntchitoCVD yapamwamba kwambiri (Chemical Vapor Deposition) epitaxy, zomwe zimathandiza kuwongolera molondola makulidwe, kugwiritsa ntchito mankhwala osokoneza bongo, ndi mtundu wa kristalo, ngakhale pa zigawo zokhuthala kwambiri.

CVD Epitaxy– Mpweya woyeretsedwa kwambiri komanso zinthu zabwino kwambiri zimathandiza kuti malo osalala komanso opanda chilema chilichonse azitha kuoneka bwino.
Kukula kwa Zigawo Zokhuthala- Maphikidwe a njira ya mwiniwake amalola makulidwe a epitaxial mpaka500 μmndi kufanana kwabwino kwambiri.
Kulamulira Kugwiritsa Ntchito Mankhwala Osokoneza Bongo- Kusinthasintha kosinthika pakati1×10¹⁴ – 1×10¹⁶ cm⁻³, ndi kufanana bwino kuposa ± 5%.
Kukonzekera Pamwamba- Ma Wafers amadutsaKupukuta kwa CMPndi kuwunika kokhwima, kuonetsetsa kuti zikugwirizana ndi njira zapamwamba monga gate oxidation, photolithography, ndi metallization.

Ubwino Waukulu

Mphamvu ya Voltage Yapamwamba Kwambiri– Zigawo zokhuthala za epitaxial (100–500 μm) zimathandiza mapangidwe a MOSFET a kV-class.
Ubwino Wapadera wa Crystal- Kuchepa kwa malo otsetsereka komanso kuchuluka kwa zolakwika za basal plane kumathandizira kudalirika ndikuchepetsa kutayikira.
Ma Substrates Aakulu a Mainchesi 6- Chithandizo cha kupanga zinthu zambiri, mtengo wotsika pa chipangizo chilichonse, komanso kugwirizana bwino.
Katundu Wapamwamba Wotentha- Kutentha kwambiri komanso kusiyana kwakukulu kwa magetsi kumathandiza kuti magetsi azigwira ntchito bwino pa mphamvu ndi kutentha kwakukulu.
Magawo Osinthika- Kukhuthala, kugwiritsa ntchito mankhwala oletsa kutupa, kuyang'ana bwino, ndi kutha kwa pamwamba kungakonzedwe kuti kugwirizane ndi zofunikira zinazake.

Mafotokozedwe Achizolowezi

Chizindikiro	Kufotokozera
Mtundu wa Mayendedwe	Mtundu wa N (wopangidwa ndi nayitrogeni)
Kusakhazikika	Chilichonse
Ngodya Yopanda Ola	4° ± 0.5° (kuyandikira [11-20])
Kuyang'ana kwa Makristalo	(0001) Si-face
Kukhuthala	200–300 μm (yosinthika 100–500 μm)
Kumaliza Pamwamba	Kutsogolo: CMP yopukutidwa (yokonzeka kugwiritsidwa ntchito ndi epi) Kumbuyo: yozungulira kapena yopukutidwa
TTV	≤ 10 μm
Uta/Kupindika	≤ 20 μm

Madera Ogwiritsira Ntchito

Ma wafer a epitaxial a 4H-SiC ndi oyenera kwambiriMa MOSFET mu makina amphamvu kwambiri, kuphatikizapo:

Ma inverter oyendetsera magalimoto amagetsi ndi ma module ochaja amphamvu kwambiri
Zipangizo zotumizira ndi kugawa zanzeru pa gridi yanzeru
Zosinthira mphamvu zongowonjezwdwa (dzuwa, mphepo, malo osungira)
Zipangizo zamagetsi zamagetsi ndi makina osinthira zinthu zamafakitale amphamvu kwambiri

FAQ

Q1: Kodi mtundu wa conductivity ndi wotani?
A1: Mtundu wa N, wodzazidwa ndi nayitrogeni — muyezo wa makampani a MOSFET ndi zida zina zamagetsi.

Q2: Ndi makulidwe ati a epitaxial omwe alipo?
A2: 100–500 μm, yokhala ndi zosankha zokhazikika pa 100 μm, 200 μm, ndi 300 μm. Makulidwe opangidwa mwamakonda amapezeka mukawapempha.

Q3: Kodi mawonekedwe a wafer ndi ngodya yosiyana ndi yotani?
A3: (0001) Si-face, yokhala ndi 4° ± 0.5° off-axis kulowera ku [11-20].

Zambiri zaife

XKH imagwira ntchito kwambiri pakupanga, kupanga, ndi kugulitsa magalasi apadera a kuwala ndi zinthu zatsopano zamakristalo. Zogulitsa zathu zimapereka zinthu zamagetsi, zamagetsi, ndi zankhondo. Timapereka zinthu za Sapphire optical, zophimba ma lens a foni yam'manja, Ceramics, LT, Silicon Carbide SIC, Quartz, ndi ma crystal wafers a semiconductor. Ndi ukatswiri waluso komanso zida zamakono, timachita bwino kwambiri pokonza zinthu zosakhazikika, cholinga chathu ndi kukhala kampani yotsogola kwambiri yaukadaulo wamagetsi.