Wafa wa Silicon Carbide wa mainchesi 3, 76.2mm, 4H-Semi SiC substrate wafafa wa Silicon Carbide wonyoza pang'ono

Kufotokozera Kwachidule:

Wafer wa SiC wa mtundu wa 3inch (Silicon Carbide) wapamwamba kwambiri wa makampani amagetsi ndi optoelectronic. Wafer wa SiC wa 3inch ndi wa m'badwo wotsatira wa semiconductor, semi-insulating silicon-carbide wafers wa mainchesi 3. Wafers awa amapangidwira kupanga zida zamagetsi, RF ndi optoelectronics.


Mawonekedwe

Mafotokozedwe a Zamalonda

Ma wafer a substrate a mainchesi atatu a 4H okhala ndi insulation ya SiC (silicon carbide) ndi zinthu zomwe zimagwiritsidwa ntchito kwambiri. 4H imasonyeza kapangidwe ka kristalo ya tetrahexahedral. Semi-insulation imatanthauza kuti substrate ili ndi mphamvu zotsutsa kwambiri ndipo ikhoza kuchotsedwa pang'ono kuchokera ku kayendedwe ka mphamvu.

Ma wafer oterewa ali ndi makhalidwe awa: kutentha kwambiri, kutayika kochepa kwa conduction, kukana kutentha kwambiri, komanso kukhazikika bwino kwa makina ndi mankhwala. Chifukwa chakuti silicon carbide ili ndi kusiyana kwakukulu kwa mphamvu ndipo imatha kupirira kutentha kwambiri komanso mikhalidwe yamagetsi yambiri, ma wafer a 4H-SiC omwe amasungunuka pang'ono amagwiritsidwa ntchito kwambiri mu zida zamagetsi zamagetsi ndi ma radio frequency (RF).

Ntchito zazikulu za ma wafer a 4H-SiC semi-insulated ndi izi:

1--Magetsi amagetsi amphamvu: Ma wafer a 4H-SiC angagwiritsidwe ntchito popanga zipangizo zosinthira magetsi monga MOSFET (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors) ndi Schottky diodes. Zipangizozi zimakhala ndi kutayika kochepa kwa conduction ndi switching m'malo okwera magetsi komanso kutentha kwambiri ndipo zimapereka magwiridwe antchito komanso kudalirika kwakukulu.

Zipangizo 2--Ma Radio Frequency (RF): Ma wafer a 4H-SiC semi-insulated angagwiritsidwe ntchito kupanga ma amplifiers amphamvu kwambiri, ma RF power amplifiers amphamvu kwambiri, ma chip resistors, ma filters, ndi zipangizo zina. Silicon carbide ili ndi magwiridwe antchito abwino kwambiri komanso kukhazikika kwa kutentha chifukwa cha kuchuluka kwa ma electron saturation drift rate komanso kutentha kwambiri.

Zipangizo zamagetsi 3--Optoelectronic: Ma wafer a 4H-SiC semi-insulated angagwiritsidwe ntchito popanga ma laser diode amphamvu kwambiri, zowunikira kuwala kwa UV ndi ma optoelectronic integrated circuits.

Ponena za momwe msika umayendera, kufunikira kwa ma wafer a 4H-SiC semi-insulated kukuchulukirachulukira chifukwa cha kukula kwa magetsi amphamvu, RF ndi optoelectronics. Izi zili choncho chifukwa chakuti silicon carbide ili ndi ntchito zosiyanasiyana, kuphatikizapo kugwiritsa ntchito bwino mphamvu, magalimoto amagetsi, mphamvu zongowonjezwdwanso komanso kulumikizana. M'tsogolomu, msika wa ma wafer a 4H-SiC semi-insulated ukadali wabwino kwambiri ndipo akuyembekezeka kusintha zinthu zachikhalidwe za silicon m'njira zosiyanasiyana.

Chithunzi Chatsatanetsatane

Ma wafer a SiC osasangalatsa kwenikweni (1)
Ma wafer a SiC osanyoza pang'ono (2)
Ma wafer a SiC osanyoza pang'ono (3)

  • Yapitayi:
  • Ena:

  • Lembani uthenga wanu apa ndipo mutitumizireni