SiC silicon carbidechipangizo chimatanthawuza chipangizo chopangidwa ndi silicon carbide ngati zopangira.
Malinga ndi kukana kwamitundu yosiyanasiyana, imagawidwa kukhala zida zamagetsi zamagetsi za silicon carbide ndiSemi-insulated silicon carbideZida za RF.
Mafomu akuluakulu a chipangizo ndi kugwiritsa ntchito silicon carbide
Ubwino waukulu wa SiC paSi zipangizondi:
SiC ili ndi kusiyana kwa gulu 3 nthawi ya Si, yomwe imatha kuchepetsa kutayikira ndikuwonjezera kulolerana kwa kutentha.
SiC ili ndi mphamvu 10 kuposa mphamvu ya Si, imatha kusintha kachulukidwe kameneka, ma frequency ogwiritsira ntchito, kupirira mphamvu yamagetsi ndikuchepetsa kutayika kwapa-off, koyenera kugwiritsa ntchito ma voliyumu apamwamba.
SiC ili ndi liwiro la electron saturation drift la Si, kotero imatha kugwira ntchito pafupipafupi.
SiC ili ndi 3 kuwirikiza kwa matenthedwe a Si, kuyendetsa bwino kutentha kwa kutentha, kumatha kuthandizira kachulukidwe kamphamvu ndikuchepetsa zofunikira za kutentha, kupangitsa chipangizocho kukhala chopepuka.
Conductive gawo lapansi
Conductive gawo lapansi: Pochotsa zonyansa zosiyanasiyana mu kristalo, makamaka zonyansa zosazama kwambiri, kuti mukwaniritse kukhazikika kwamphamvu kwa kristalo.
Woyendetsasilicon carbide gawo lapansiSiC chowotcha
Conductive pakachitsulo carbide mphamvu chipangizo ndi mwa kukula kwa pakachitsulo carbide epitaxial wosanjikiza pa conductive gawo lapansi, ndi pakachitsulo carbide epitaxial pepala ndi kukonzedwanso, kuphatikizapo kupanga Schottky diodes, MOSFET, IGBT, etc., makamaka ntchito magetsi magalimoto, photovoltaic mphamvu. kupanga, mayendedwe a njanji, malo opangira data, kulipiritsa ndi zida zina. Ubwino wa magwiridwe antchito ndi awa:
Makhalidwe apamwamba kwambiri. Mphamvu yamagetsi yamagetsi ya silicon carbide ndi yopitilira 10 kuposa ya silicon, zomwe zimapangitsa kuti zida za silicon carbide zikhale zokwera kwambiri kuposa zida zofanana za silicon.
Ubwino mkulu kutentha makhalidwe. Silicon carbide imakhala ndi matenthedwe apamwamba kwambiri kuposa silicon, zomwe zimapangitsa kuti kutentha kwa chipangizocho kukhale kosavuta komanso kuchepetsa kutentha kwa ntchito. Kukana kutentha kwakukulu kungapangitse kuwonjezeka kwakukulu kwa mphamvu zamagetsi, pamene kuchepetsa zofunikira pazitsulo zoziziritsa kukhosi, kotero kuti terminal ikhoza kukhala yopepuka komanso yaying'ono.
Kugwiritsa ntchito mphamvu zochepa. ① Chipangizo cha Silicon carbide chimakhala chotsika kwambiri chokana komanso chitayika chochepa; (2) Kutayikira kwa zida za silicon carbide kumachepetsedwa kwambiri kuposa zida za silicon, potero kumachepetsa kutayika kwa mphamvu; ③ Palibe chodabwitsa chaposachedwa pakuzimitsa zida za silicon carbide, ndipo kutayika kosinthika kumakhala kochepa, komwe kumathandizira kwambiri kusinthasintha kwazomwe zimagwiritsidwa ntchito.
Semi-insulated SiC gawo lapansi
Semi-insulated SiC substrate: N doping imagwiritsidwa ntchito kuwongolera molondola kusasinthika kwa zinthu zoyendetsa poyang'anira ubale womwe ulipo pakati pa nitrogen doping concentration, kukula kwa crystal resistivity.
Mkulu chiyero theka-kuteteza gawo lapansi zakuthupi
Zida za Semi-insulated silicon carbon-based RF zimapangidwanso ndi kukula kwa gallium nitride epitaxial layer pa semi-insulated silicon carbide substrate kukonzekera pepala la silicon nitride epitaxial, kuphatikiza HEMT ndi zida zina za gallium nitride RF, zomwe zimagwiritsidwa ntchito makamaka muzolumikizana za 5G, kulumikizana kwamagalimoto, ntchito zodzitchinjiriza, kutumiza kwa data, zakuthambo.
Kuchulukirachulukira kwa electron drift rate silicon carbide ndi gallium nitride materials ndi 2.0 ndi 2.5 nthawi ya silicon motsatana, kotero kuti ma frequency opangira silicon carbide ndi gallium nitride ndi akulu kuposa zida zachikhalidwe za silicon. Komabe, gallium nitride zakuthupi ali ndi kuipa osauka kukana kutentha, pamene pakachitsulo carbide ali wabwino kutentha kukana ndi matenthedwe madutsidwe, amene akhoza kupanga kwa osauka kutentha kukana gallium nitride zipangizo, kotero makampani amatenga theka-insulated pakachitsulo carbide monga gawo lapansi. , ndipo gan epitaxial wosanjikiza amamera pa silicon carbide gawo lapansi kuti apange zida za RF.
Ngati pali kuphwanya, kukhudzana kufufuta
Nthawi yotumiza: Jul-16-2024