Chidule cha SiC wafer
Zowotcha za silicon carbide (SiC) zakhala gawo laling'ono lamagetsi apamwamba, othamanga kwambiri, komanso kutentha kwambiri pamagalimoto, mphamvu zongowonjezwdwa, ndi zamlengalenga. Mbiri yathu imakhudza ma polytypes ndi ma doping schemes - nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), ndi p-type 4H/6H (4H/6H-P) -yoperekedwa m'makalasi atatu: PRIME (yopukutidwa bwino, yopukutidwa bwino, makina opukutidwa, opukutidwa) FUFUZANI (zosanjikiza za epi ndi mbiri ya doping ya R&D). Wafer diameters utalikirana 2 ″, 4 ″, 6 ″, 8 ″, ndi 12 ″ kuti igwirizane ndi zida zonse zakale ndi nsalu zapamwamba. Timaperekanso ma boules a monocrystalline ndi makristasi ambewu omwe amawongolera ndendende kuti athandizire kukula kwa kristalo mnyumba.
Zophika zathu za 4H-N zimakhala ndi kachulukidwe konyamula kuchokera ku 1 × 10¹⁶ mpaka 1 × 10¹⁹ cm⁻³ ndi zopinga za 0.01–10 Ω·cm, zoperekera ma elekitironi abwino kwambiri ndi magawo osweka pamwamba pa 2 MV/cm—oyenera ma diodi a Schottky, ndi ma JMOSsFET. Magawo a HPSI amapitilira 1×10¹² Ω·cm resistivity yokhala ndi kachulukidwe ka ma micropipe pansi pa 0.1 cm⁻², kuwonetsetsa kutayikira kochepa kwa zida za RF ndi microwave. Cubic 3C-N, yomwe imapezeka mumitundu ya 2 ″ ndi 4 ″, imathandizira heteroepitaxy pa silicon ndipo imathandizira mapulogalamu amtundu wa Photonic ndi MEMS. P-mtundu wa 4H/6H-P zowotcha, zopangidwa ndi aluminiyamu mpaka 1×10¹⁶–5×10¹⁸ cm⁻³, zimathandizira kamangidwe ka zida.
PRIME wafers amapangidwa ndi mankhwala-makina kupukuta mpaka <0.2 nm RMS pamwamba roughness, kusiyanasiyana makulidwe pansi pa 3 µm, ndi uta <10 µm. Magawo a DUMMY amafulumizitsa kuyesa kusonkhanitsa ndi kuyika, pomwe zowotcha za RESEARCH zimakhala ndi makulidwe a epi-layer a 2-30 µm ndi doping yodziwika bwino. Zogulitsa zonse zimatsimikiziridwa ndi X-ray diffraction (rocking curve <30 arcsec) ndi Raman spectroscopy, ndi mayesero amagetsi-Mayeso a Hall, C-V profiling, ndi micropipe scanning-kuonetsetsa kuti JEDEC ndi SEMI zitsatiridwa.
Ma boules mpaka 150 mm m'mimba mwake amakula kudzera pa PVT ndi CVD ndi kusasunthika kosasunthika pansi pa 1 × 10³ cm⁻² komanso kuchuluka kwa ma micropipe. Makhiristo a mbeu amadulidwa mkati mwa 0.1° wa c-axis kuti atsimikizire kukula bwino komanso zokolola zambiri.
Pophatikiza ma polytypes angapo, mitundu yosiyanasiyana ya doping, magiredi apamwamba, kukula kwake, komanso kupanga m'nyumba ndi makristalo ambewu, nsanja yathu ya SiC substrate imawongolera maunyolo ndikufulumizitsa chitukuko cha zida zamagalimoto amagetsi, ma gridi anzeru, komanso kugwiritsa ntchito mwankhanza zachilengedwe.
Chidule cha SiC wafer
Zowotcha za silicon carbide (SiC) zakhala gawo laling'ono lamagetsi apamwamba, othamanga kwambiri, komanso kutentha kwambiri pamagalimoto, mphamvu zongowonjezwdwa, ndi zamlengalenga. Mbiri yathu imakhudza ma polytypes ndi ma doping schemes - nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), ndi p-type 4H/6H (4H/6H-P) -yoperekedwa m'makalasi atatu: PRIME (yopukutidwa bwino, yopukutidwa bwino, makina opukutidwa, opukutidwa) FUFUZANI (zosanjikiza za epi ndi mbiri ya doping ya R&D). Wafer diameters utalikirana 2 ″, 4 ″, 6 ″, 8 ″, ndi 12 ″ kuti igwirizane ndi zida zonse zakale ndi nsalu zapamwamba. Timaperekanso ma boules a monocrystalline ndi makristasi ambewu omwe amawongolera ndendende kuti athandizire kukula kwa kristalo mnyumba.
Zophika zathu za 4H-N zimakhala ndi kachulukidwe konyamula kuchokera ku 1 × 10¹⁶ mpaka 1 × 10¹⁹ cm⁻³ ndi zopinga za 0.01–10 Ω·cm, zoperekera ma elekitironi abwino kwambiri ndi magawo osweka pamwamba pa 2 MV/cm—oyenera ma diodi a Schottky, ndi ma JMOSsFET. Magawo a HPSI amapitilira 1×10¹² Ω·cm resistivity yokhala ndi kachulukidwe ka ma micropipe pansi pa 0.1 cm⁻², kuwonetsetsa kutayikira kochepa kwa zida za RF ndi microwave. Cubic 3C-N, yomwe imapezeka mumitundu ya 2 ″ ndi 4 ″, imathandizira heteroepitaxy pa silicon ndipo imathandizira mapulogalamu amtundu wa Photonic ndi MEMS. P-mtundu wa 4H/6H-P zowotcha, zopangidwa ndi aluminiyamu mpaka 1×10¹⁶–5×10¹⁸ cm⁻³, zimathandizira kamangidwe ka zida.
PRIME wafers amapangidwa ndi mankhwala-makina kupukuta mpaka <0.2 nm RMS pamwamba roughness, kusiyanasiyana makulidwe pansi pa 3 µm, ndi uta <10 µm. Magawo a DUMMY amafulumizitsa kuyesa kusonkhanitsa ndi kuyika, pomwe zowotcha za RESEARCH zimakhala ndi makulidwe a epi-layer a 2-30 µm ndi doping yodziwika bwino. Zogulitsa zonse zimatsimikiziridwa ndi X-ray diffraction (rocking curve <30 arcsec) ndi Raman spectroscopy, ndi mayesero amagetsi-Mayeso a Hall, C-V profiling, ndi micropipe scanning-kuonetsetsa kuti JEDEC ndi SEMI zitsatiridwa.
Ma boules mpaka 150 mm m'mimba mwake amakula kudzera pa PVT ndi CVD ndi kusasunthika kosasunthika pansi pa 1 × 10³ cm⁻² komanso kuchuluka kwa ma micropipe. Makhiristo a mbeu amadulidwa mkati mwa 0.1° wa c-axis kuti atsimikizire kukula bwino komanso zokolola zambiri.
Pophatikiza ma polytypes angapo, mitundu yosiyanasiyana ya doping, magiredi apamwamba, kukula kwake, komanso kupanga m'nyumba ndi makristalo ambewu, nsanja yathu ya SiC substrate imawongolera maunyolo ndikufulumizitsa chitukuko cha zida zamagalimoto amagetsi, ma gridi anzeru, komanso kugwiritsa ntchito mwankhanza zachilengedwe.
Chithunzi cha SiC wafer
Tsamba la data la 6inch 4H-N mtundu wa SiC wafer
| 6inch SiC wafers data sheet | ||||
| Parameter | Sub-Parameter | Z kalasi | P kalasi | D kalasi |
| Diameter | 149.5-150.0 mm | 149.5-150.0 mm | 149.5-150.0 mm | |
| Makulidwe | 4H-N | 350µm ± 15µm | 350µm ± 25µm | 350µm ± 25µm |
| Makulidwe | 4H‑SI | 500µm ± 15µm | 500µm ± 25µm | 500µm ± 25µm |
| Wafer Orientation | Kuchokera kumbali: 4.0 ° kulowera <11-20> ± 0.5 ° (4H-N); Pa axis: <0001> ±0.5° (4H-SI) | Kuchokera kumbali: 4.0 ° kulowera <11-20> ± 0.5 ° (4H-N); Pa axis: <0001> ±0.5° (4H-SI) | Kuchokera kumbali: 4.0 ° kulowera <11-20> ± 0.5 ° (4H-N); Pa axis: <0001> ±0.5° (4H-SI) | |
| Kuchuluka kwa Micropipe | 4H-N | ≤ 0.2cm⁻² | ≤ 2cm⁻² | ≤ 15 cm⁻² |
| Kuchuluka kwa Micropipe | 4H‑SI | ≤ 1 cm⁻² | ≤ 5cm⁻² | ≤ 15 cm⁻² |
| Kukaniza | 4H-N | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | 0.015–0.028 Ω·cm |
| Kukaniza | 4H‑SI | ≥ 1×10¹⁰ Ω·cm | ≥ 1×10⁵ Ω·cm | |
| Chiyambi cha Flat Orientation | [10-10] ± 5.0° | [10-10] ± 5.0° | [10-10] ± 5.0° | |
| Utali Woyambira Wathyathyathya | 4H-N | 47.5 mm ± 2.0 mm | ||
| Utali Woyambira Wathyathyathya | 4H‑SI | Notch | ||
| Kupatula M'mphepete | 3 mm | |||
| Warp/LTV/TTV/Bow | ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm | ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm | ||
| Ukali | Chipolishi | Ra ≤ 1 nm | ||
| Ukali | CMP | Ra ≤ 0.2 nm | Ra ≤ 0.5 nm | |
| Ming'alu Zam'mphepete | Palibe | Kutalika kokwanira ≤ 20 mm, limodzi ≤ 2 mm | ||
| Zithunzi za Hex | Malo owonjezera ≤ 0.05% | Malo owonjezera ≤ 0.1% | Malo owonjezera ≤ 1% | |
| Madera a Polytype | Palibe | Malo owonjezera ≤ 3% | Malo owonjezera ≤ 3% | |
| Carbon Inclusions | Malo owonjezera ≤ 0.05% | Malo owonjezera ≤ 3% | ||
| Zolemba Pamwamba | Palibe | Utali wokwanira ≤ 1 × wafer awiri | ||
| Chips za Edge | Palibe chololedwa ≥ 0.2 mm m'lifupi & kuya | Mpaka tchipisi 7, ≤ 1 mm iliyonse | ||
| TSD (Threading screw Dislocation) | ≤500cm⁻² | N / A | ||
| BPD (Base Plane Dislocation) | ≤1000cm⁻² | N / A | ||
| Kuipitsidwa Pamwamba | Palibe | |||
| Kupaka | Multi-wafer cassette kapena single wafer container | Multi-wafer cassette kapena single wafer container | Multi-wafer cassette kapena single wafer container | |
Tsamba la data la 4inch 4H-N mtundu wa SiC wafer
| Tsamba la data la 4inch SiC wafer | |||
| Parameter | Zero MPD Production | Gulu Lokhazikika Lopanga (P Grade) | Dummy Grade (D Grade) |
| Diameter | 99.5 mm-100.0 mm | ||
| Kukula (4H-N) | 350µm±15µm | 350µm±25µm | |
| Makulidwe (4H-Si) | 500µm±15µm | 500µm±25µm | |
| Wafer Orientation | Kuchokera kumbali: 4.0 ° kulowera <1120> ± 0.5 ° kwa 4H-N; Pa axis: <0001> ± 0.5 ° kwa 4H-Si | ||
| Kachulukidwe ka Micropipe (4H-N) | ≤0.2cm⁻² | ≤2 cm⁻² | ≤15cm⁻² |
| Kachulukidwe ka Micropipe (4H-Si) | ≤1cm⁻² | ≤5cm⁻² | ≤15cm⁻² |
| Kukaniza (4H-N) | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | |
| Kukaniza (4H-Si) | ≥1E10 Ω·cm | ≥1E5 Ω·cm | |
| Chiyambi cha Flat Orientation | [10-10] ±5.0° | ||
| Utali Woyambira Wathyathyathya | 32.5 mm ± 2.0 mm | ||
| Kutalika kwa Sekondale | 18.0 mm ± 2.0 mm | ||
| Sekondale Flat Orientation | Silicon yayang'ana m'mwamba: 90 ° CW kuchokera kumtunda wapamwamba ± 5.0 ° | ||
| Kupatula M'mphepete | 3 mm | ||
| LTV/TTV/Bow Warp | ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Ukali | Chipolishi Ra ≤1 nm; CMP Ra ≤0.2 nm | Ra ≤0.5 nm | |
| Mphepete Mng'alu Mwa Kuwala Kwakukulu Kwambiri | Palibe | Palibe | Kutalika kokwanira ≤10 mm; Utali umodzi ≤2 mm |
| Hex Plates Mwa Kuwala Kwakukulu Kwambiri | Malo owonjezera ≤0.05% | Malo owonjezera ≤0.05% | Malo owonjezera ≤0.1% |
| Madera a Polytype Mwa Kuwala Kwakukulu Kwambiri | Palibe | Malo owonjezera ≤3% | |
| Mawonekedwe a Carbon Inclusions | Malo owonjezera ≤0.05% | Malo owonjezera ≤3% | |
| Silicon Surface Scratches Ndi Kuwala Kwakukulu Kwambiri | Palibe | Kutalika kochulukira ≤1 m'mimba mwake | |
| Mphepete Chips Mwa High Intensity Kuwala | Palibe chololedwa ≥0.2 mm m'lifupi ndi kuya | 5 zololedwa, ≤1 mm iliyonse | |
| Silicon Surface Kuipitsidwa Ndi Kuwala Kwakukulu Kwambiri | Palibe | ||
| Kusintha kwa screw screw | ≤500cm⁻² | N / A | |
| Kupaka | Multi-wafer cassette kapena single wafer container | Multi-wafer cassette kapena single wafer container | Multi-wafer cassette kapena single wafer container |
Tsamba la data la 4inch HPSI mtundu wa SiC wafer
| Tsamba la data la 4inch HPSI mtundu wa SiC wafer | |||
| Parameter | Zero MPD Kalasi Yopanga (Z Giredi) | Gulu Lokhazikika Lopanga (P Grade) | Dummy Grade (D Grade) |
| Diameter | 99.5-100.0 mm | ||
| Makulidwe (4H-Si) | 500µm ±20µm | 500µm ±25µm | |
| Wafer Orientation | Kuchokera pamtunda: 4.0 ° kulowera <11-20> ± 0.5 ° kwa 4H-N; Pa axis: <0001> ± 0.5 ° kwa 4H-Si | ||
| Kachulukidwe ka Micropipe (4H-Si) | ≤1cm⁻² | ≤5cm⁻² | ≤15cm⁻² |
| Kukaniza (4H-Si) | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |
| Chiyambi cha Flat Orientation | (10-10) ± 5.0° | ||
| Utali Woyambira Wathyathyathya | 32.5 mm ± 2.0 mm | ||
| Kutalika kwa Sekondale | 18.0 mm ± 2.0 mm | ||
| Sekondale Flat Orientation | Silicon yayang'ana m'mwamba: 90 ° CW kuchokera kumtunda wapamwamba ± 5.0 ° | ||
| Kupatula M'mphepete | 3 mm | ||
| LTV/TTV/Bow Warp | ≤3 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Ukali (C nkhope) | Chipolishi | Ra ≤1 nm | |
| Ukali (Nkhope) | CMP | Ra ≤0.2 nm | Ra ≤0.5 nm |
| Mphepete Mng'alu Mwa Kuwala Kwakukulu Kwambiri | Palibe | Kutalika kokwanira ≤10 mm; Utali umodzi ≤2 mm | |
| Hex Plates Mwa Kuwala Kwakukulu Kwambiri | Malo owonjezera ≤0.05% | Malo owonjezera ≤0.05% | Malo owonjezera ≤0.1% |
| Madera a Polytype Mwa Kuwala Kwakukulu Kwambiri | Palibe | Malo owonjezera ≤3% | |
| Mawonekedwe a Carbon Inclusions | Malo owonjezera ≤0.05% | Malo owonjezera ≤3% | |
| Silicon Surface Scratches Ndi Kuwala Kwakukulu Kwambiri | Palibe | Kutalika kochulukira ≤1 m'mimba mwake | |
| Mphepete Chips Mwa High Intensity Kuwala | Palibe chololedwa ≥0.2 mm m'lifupi ndi kuya | 5 zololedwa, ≤1 mm iliyonse | |
| Silicon Surface Kuipitsidwa Ndi Kuwala Kwakukulu Kwambiri | Palibe | Palibe | |
| Kusintha kwa Screw Dislocation | ≤500cm⁻² | N / A | |
| Kupaka | Multi-wafer cassette kapena single wafer container | ||
Nthawi yotumiza: Jun-30-2025