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Buku Lotsogolera la Silicon Carbide Wafers/SiC wafer

Chidule cha SiC wafer

 Ma wafer a silicon carbide (SiC)Zakhala ngati gawo losankhidwa la zamagetsi amphamvu kwambiri, ma frequency apamwamba, komanso kutentha kwambiri m'magawo a magalimoto, mphamvu zongowonjezwdwanso, komanso ndege. Ma portfolio athu akuphatikizapo mitundu yayikulu ya polytypes ndi njira zopangira doping—4H (4H-N) yokhala ndi nayitrogeni, 3C (3C-N) yokhala ndi purity yapamwamba, ndi 4H/6H (4H/6H-P)—yomwe imaperekedwa m'magawo atatu abwino: PRIME (zopangidwa ndi zida zopukutidwa bwino), DUMMY (yolumikizidwa kapena yosapukutidwa kuti igwiritsidwe ntchito poyesa), ndi RESEARCH (magawo a epi opangidwa mwamakonda ndi ma profiles opangira doping a R&D). Ma diameter a Wafer amafikira 2″, 4″, 6″, 8″, ndi 12″ kuti agwirizane ndi zida zakale komanso zinthu zapamwamba. Timaperekanso ma boules a monocrystalline ndi ma crystals a mbewu olunjika bwino kuti athandizire kukula kwa kristalo m'nyumba.

Ma wafer athu a 4H-N ali ndi kuchuluka kwa carrier kuyambira 1×10¹⁶ mpaka 1×10¹⁹ cm⁻³ ndi resistivities ya 0.01–10 Ω·cm, kupereka ma elekitironi oyenda bwino komanso malo owonongeka pamwamba pa 2 MV/cm — abwino kwambiri kwa ma Schottky diodes, MOSFETs, ndi JFETs. Ma substrates a HPSI amaposa 1×10¹² Ω·cm resistivity yokhala ndi micropipe densities pansi pa 0.1 cm⁻², kuonetsetsa kuti kutayikira kochepa kwa RF ndi zida za microwave. Cubic 3C-N, yomwe imapezeka mumitundu ya 2″ ndi 4″, imathandizira heteroepitaxy pa silicon ndipo imathandizira mapulogalamu atsopano a photonic ndi MEMS. Ma wafer a P-type 4H/6H-P, ophatikizidwa ndi aluminiyamu mpaka 1×10¹⁶–5×10¹⁸ cm⁻³, amathandizira mapangidwe owonjezera a zida.

Ma wafer a SiC, PRIME amapukutidwa ndi mankhwala mpaka kufika pa <0.2 nm RMS roughness, makulidwe osiyanasiyana pansi pa 3 µm, ndi bow <10 µm. Ma substrates a DUMMY amafulumizitsa mayeso a assembly ndi packing, pomwe ma wafer a RESEARCH ali ndi makulidwe a epi-layer a 2–30 µm ndi doping yapadera. Zogulitsa zonse zimatsimikiziridwa ndi X-ray diffraction (rocking curve <30 arcsec) ndi Raman spectroscopy, ndi mayeso amagetsi—Kuyeza kwa Hall, C–V profile, ndi micropipe scanning—kutsimikizira kuti JEDEC ndi SEMI zikugwirizana.

Maboules okwana 150 mm m'mimba mwake amalimidwa kudzera mu PVT ndi CVD okhala ndi makulidwe osasunthika pansi pa 1 × 10³ cm⁻² komanso kuchuluka kochepa kwa micropipe. Makristalo a mbewu amadulidwa mkati mwa 0.1° kuchokera ku c-axis kuti atsimikizire kukula kobwerezabwereza komanso zokolola zambiri.

Mwa kuphatikiza mitundu ingapo ya polytypes, mitundu yosiyanasiyana ya doping, magiredi abwino, kukula kwa SiC wafer, ndi kupanga maboule ndi seed-crystal mkati mwa nyumba, nsanja yathu ya SiC substrate imapangitsa kuti unyolo woperekera zinthu ukhale wosavuta komanso imathandizira kupanga zida zamagalimoto amagetsi, ma gridi anzeru, ndi ntchito zachilengedwe zovuta.

Chidule cha SiC wafer

 Ma wafer a silicon carbide (SiC)akhala gawo losankhidwa la SiC la zamagetsi amphamvu kwambiri, ma frequency apamwamba, komanso kutentha kwambiri m'magawo a magalimoto, mphamvu zongowonjezwdwanso, komanso ndege. Ma portfolio athu akuphatikizapo mitundu yayikulu ya polytypes ndi njira zopangira doping—4H (4H-N) yokhala ndi nayitrogeni, 4H (4H-N) yokhala ndi purity yapamwamba, 3C (3C-N) yokhala ndi nayitrogeni, ndi 4H/6H (4H/6H-P)—yoperekedwa m'magawo atatu abwino: SiC waferPRIME (zopangidwa ndi zipangizo zopukutidwa bwino, zogwiritsidwa ntchito pa chipangizo), DUMMY (yolumikizidwa kapena yosapukutidwa kuti igwiritsidwe ntchito poyesa), ndi RESEARCH (magawo a epi opangidwa mwamakonda ndi ma profiles a doping a R&D). Ma diameter a SiC Wafer ndi 2″, 4″, 6″, 8″, ndi 12″ kuti agwirizane ndi zida zakale komanso zinthu zapamwamba. Timaperekanso ma boules a monocrystalline ndi ma crystals a mbewu olunjika bwino kuti athandizire kukula kwa ma crystal m'nyumba.

Ma wafer athu a 4H-N SiC ali ndi kuchuluka kwa carrier kuyambira 1×10¹⁶ mpaka 1×10¹⁹ cm⁻³ ndi resistivities ya 0.01–10 Ω·cm, kupereka ma elekitironi oyenda bwino komanso malo owonongeka pamwamba pa 2 MV/cm — abwino kwambiri kwa ma Schottky diodes, MOSFETs, ndi JFETs. Ma substrates a HPSI amaposa 1×10¹² Ω·cm resistivity yokhala ndi micropipe densities pansi pa 0.1 cm⁻², kuonetsetsa kuti kutayikira kochepa kwa RF ndi zida za microwave. Cubic 3C-N, yomwe imapezeka mumitundu ya 2″ ndi 4″, imathandizira heteroepitaxy pa silicon ndipo imathandizira mapulogalamu atsopano a photonic ndi MEMS. Ma wafer a SiC wafer P-type 4H/6H-P, ophatikizidwa ndi aluminiyamu mpaka 1×10¹⁶–5×10¹⁸ cm⁻³, amathandizira mapangidwe a zida zowonjezera.

Ma wafer a SiC wafer a PRIME amapukutidwa ndi mankhwala mpaka kufika pa <0.2 nm RMS roughness, makulidwe onse pansi pa 3 µm, ndi bow <10 µm. Ma substrates a DUMMY amafulumizitsa mayeso a assembly ndi packing, pomwe ma wafer a RESEARCH ali ndi makulidwe a epi-layer a 2–30 µm ndi doping yapadera. Zogulitsa zonse zimatsimikiziridwa ndi X-ray diffraction (rocking curve <30 arcsec) ndi Raman spectroscopy, ndi mayeso amagetsi—Kuyeza kwa Hall, C–V profile, ndi micropipe scanning—kutsimikizira kuti JEDEC ndi SEMI zikugwirizana.

Maboules okwana 150 mm m'mimba mwake amalimidwa kudzera mu PVT ndi CVD okhala ndi makulidwe osasunthika pansi pa 1 × 10³ cm⁻² komanso kuchuluka kochepa kwa micropipe. Makristalo a mbewu amadulidwa mkati mwa 0.1° kuchokera ku c-axis kuti atsimikizire kukula kobwerezabwereza komanso zokolola zambiri.

Mwa kuphatikiza mitundu ingapo ya polytypes, mitundu yosiyanasiyana ya doping, magiredi abwino, kukula kwa SiC wafer, ndi kupanga maboule ndi seed-crystal mkati mwa nyumba, nsanja yathu ya SiC substrate imapangitsa kuti unyolo woperekera zinthu ukhale wosavuta komanso imathandizira kupanga zida zamagalimoto amagetsi, ma gridi anzeru, ndi ntchito zachilengedwe zovuta.

Chithunzi cha SiC wafer

Pepala la data la SiC wafer la mainchesi 6 la 4H-N

 

Pepala la deta la ma wafer a SiC a mainchesi 6
Chizindikiro Gawo Lalikulu Giredi Z Giredi ya P Giredi D
M'mimba mwake   149.5–150.0 mm 149.5–150.0 mm 149.5–150.0 mm
Kukhuthala 4H‑N 350 µm ± 15 µm 350 µm ± 25 µm 350 µm ± 25 µm
Kukhuthala 4H‑SI 500 µm ± 15 µm 500 µm ± 25 µm 500 µm ± 25 µm
Kuwongolera kwa Wafer   Kuthamanga kwa mpweya wochepa: 4.0° kulowera <11-20> ±0.5° (4H-N); Kuthamanga kwa mpweya wochepa: <0001> ±0.5° (4H-SI) Kuthamanga kwa mpweya wochepa: 4.0° kulowera <11-20> ±0.5° (4H-N); Kuthamanga kwa mpweya wochepa: <0001> ±0.5° (4H-SI) Kuthamanga kwa mpweya wochepa: 4.0° kulowera <11-20> ±0.5° (4H-N); Kuthamanga kwa mpweya wochepa: <0001> ±0.5° (4H-SI)
Kuchuluka kwa mapaipi ang'onoang'ono 4H‑N ≤ 0.2 cm⁻² ≤ 2 cm⁻² ≤ 15 cm⁻²
Kuchuluka kwa mapaipi ang'onoang'ono 4H‑SI ≤ 1 cm⁻² ≤ 5 cm⁻² ≤ 15 cm⁻²
Kusakhazikika 4H‑N 0.015–0.024 Ω·cm 0.015–0.028 Ω·cm 0.015–0.028 Ω·cm
Kusakhazikika 4H‑SI ≥ 1×10¹⁰ Ω·cm ≥ 1×10⁵ Ω·cm  
Kuyang'ana Kwambiri Pang'onopang'ono   [10-10] ± 5.0° [10-10] ± 5.0° [10-10] ± 5.0°
Utali Woyamba Wathyathyathya 4H‑N 47.5 mm ± 2.0 mm    
Utali Woyamba Wathyathyathya 4H‑SI Chingwe    
Kupatula Mphepete     3 mm  
Chopindika/LTV/TTV/Uta   ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm  
Kuuma Chipolishi Ra ≤ 1 nm    
Kuuma CMP Ra ≤ 0.2 nm   Ra ≤ 0.5 nm
Ming'alu ya M'mphepete   Palibe   Kutalika kokwanira ≤ 20 mm, imodzi ≤ 2 mm
Mbale za Hex   Malo osonkhanitsidwa ≤ 0.05% Malo osonkhanitsidwa ≤ 0.1% Malo osonkhanitsidwa ≤ 1%
Madera a Polytype   Palibe Malo osonkhanitsidwa ≤ 3% Malo osonkhanitsidwa ≤ 3%
Kuphatikizidwa kwa Mpweya   Malo osonkhanitsidwa ≤ 0.05%   Malo osonkhanitsidwa ≤ 3%
Kukanda Pamwamba   Palibe   Kutalika kokwanira ≤ 1 × m'mimba mwake wa wafer
Ma chips a m'mphepete   Palibe chololedwa ≥ m'lifupi ndi kuya kwa 0.2 mm   Mpaka ma chips 7, ≤ 1 mm iliyonse
TSD (Kusokoneza Ulusi wa Screw)   ≤ 500 cm⁻²   N / A
BPD (Kusamuka kwa Maziko a Ndege)   ≤ 1000 cm⁻²   N / A
Kuipitsidwa kwa pamwamba   Palibe    
Kulongedza   Kaseti ya ma wafer ambiri kapena chidebe chimodzi cha ma wafer Kaseti ya ma wafer ambiri kapena chidebe chimodzi cha ma wafer Kaseti ya ma wafer ambiri kapena chidebe chimodzi cha ma wafer

Pepala la data la SiC wafer la 4inch 4H-N

 

Pepala la data la 4inch SiC wafer
Chizindikiro Kupanga kwa MPD Kopanda Giredi Yopanga Yokhazikika (Giredi ya P) Giredi Yosamveka (Giredi D)
M'mimba mwake 99.5 mm–100.0 mm
Kukhuthala (4H-N) 350 µm±15 µm   350 µm±25 µm
Kukhuthala (4H-Si) 500 µm±15 µm   500 µm±25 µm
Kuwongolera kwa Wafer Kutseka kwa mzere: 4.0° kulowera <1120> ±0.5° pa 4H-N; Pa mzere: <0001> ±0.5° pa 4H-Si    
Kuchuluka kwa mapaipi ang'onoang'ono (4H-N) ≤0.2 cm⁻² ≤2 cm⁻² ≤15 cm⁻²
Kuchuluka kwa Micropipe (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Kukana (4H-N)   0.015–0.024 Ω·cm 0.015–0.028 Ω·cm
Kukana (4H-Si) ≥1E10 Ω·cm   ≥1E5 Ω·cm
Kuyang'ana Kwambiri Pang'onopang'ono   [10-10] ±5.0°  
Utali Woyamba Wathyathyathya   32.5 mm ±2.0 mm  
Utali Wachiwiri Wathyathyathya   18.0 mm ±2.0 mm  
Kuyang'ana Kwachiwiri Kwapafupi   Silikoni yoyang'ana mmwamba: 90° CW kuchokera ku prime flat ±5.0°  
Kupatula Mphepete   3 mm  
LTV/TTV/Uta Wopindika ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Kuuma Ra ya ku Poland ≤1 nm; CMP Ra ≤0.2 nm   Ra ≤0.5 nm
Ming'alu ya Mphepete Yopangidwa ndi Kuwala Kwakukulu Kwambiri Palibe Palibe Kutalika kokwanira ≤10 mm; kutalika kamodzi ≤2 mm
Mbale za Hex Ndi Kuwala Kwakukulu Kwambiri Malo osonkhanitsidwa ≤0.05% Malo osonkhanitsidwa ≤0.05% Malo osonkhanitsidwa ≤0.1%
Malo Opangidwa ndi Polytype Ndi Kuwala Kwambiri Palibe   Malo osonkhanitsidwa ≤3%
Kuphatikizidwa kwa Kaboni Yowoneka Malo osonkhanitsidwa ≤0.05%   Malo osonkhanitsidwa ≤3%
Kukanda kwa Silicon Pamwamba Ndi Kuwala Kwambiri Palibe   Kutalika kokwanira ≤1 m'mimba mwake wa wafer
Ma Chips a M'mphepete Ndi Kuwala Kwakukulu Kwambiri Palibe chololedwa m'lifupi ndi kuya kwa ≥0.2 mm   5 zololedwa, ≤1 mm iliyonse
Kuipitsidwa kwa Silicon pamwamba ndi Kuwala Kwambiri Palibe    
Kusuntha kwa screw yolumikiza ulusi ≤500 cm⁻² N / A  
Kulongedza Kaseti ya ma wafer ambiri kapena chidebe chimodzi cha ma wafer Kaseti ya ma wafer ambiri kapena chidebe chimodzi cha ma wafer Kaseti ya ma wafer ambiri kapena chidebe chimodzi cha ma wafer

Pepala la data la HPSI mtundu wa SiC wafer wa mainchesi 4

 

Pepala la data la HPSI mtundu wa SiC wafer wa mainchesi 4
Chizindikiro Giredi Yopanga ya Zero MPD (Giredi Z) Giredi Yopanga Yokhazikika (Giredi ya P) Giredi Yosamveka (Giredi D)
M'mimba mwake   99.5–100.0 mm  
Kukhuthala (4H-Si) 500 µm ±20 µm   500 µm ±25 µm
Kuwongolera kwa Wafer Kutseka kwa mzere: 4.0° kulowera <11-20> ±0.5° pa 4H-N; Pa mzere: <0001> ±0.5° pa 4H-Si
Kuchuluka kwa Micropipe (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Kukana (4H-Si) ≥1E9 Ω·cm   ≥1E5 Ω·cm
Kuyang'ana Kwambiri Pang'onopang'ono (10-10) ±5.0°
Utali Woyamba Wathyathyathya 32.5 mm ±2.0 mm
Utali Wachiwiri Wathyathyathya 18.0 mm ±2.0 mm
Kuyang'ana Kwachiwiri Kwapafupi Silikoni yoyang'ana mmwamba: 90° CW kuchokera ku prime flat ±5.0°
Kupatula Mphepete   3 mm  
LTV/TTV/Uta Wopindika ≤3 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Kukwawa (nkhope ya C) Chipolishi Ra ≤1 nm  
Kukwawa (nkhope ya Si) CMP Ra ≤0.2 nm Ra ≤0.5 nm
Ming'alu ya Mphepete Yopangidwa ndi Kuwala Kwakukulu Kwambiri Palibe   Kutalika kokwanira ≤10 mm; kutalika kamodzi ≤2 mm
Mbale za Hex Ndi Kuwala Kwakukulu Kwambiri Malo osonkhanitsidwa ≤0.05% Malo osonkhanitsidwa ≤0.05% Malo osonkhanitsidwa ≤0.1%
Malo Opangidwa ndi Polytype Ndi Kuwala Kwambiri Palibe   Malo osonkhanitsidwa ≤3%
Kuphatikizidwa kwa Kaboni Yowoneka Malo osonkhanitsidwa ≤0.05%   Malo osonkhanitsidwa ≤3%
Kukanda kwa Silicon Pamwamba Ndi Kuwala Kwambiri Palibe   Kutalika kokwanira ≤1 m'mimba mwake wa wafer
Ma Chips a M'mphepete Ndi Kuwala Kwakukulu Kwambiri Palibe chololedwa m'lifupi ndi kuya kwa ≥0.2 mm   5 zololedwa, ≤1 mm iliyonse
Kuipitsidwa kwa Silicon pamwamba ndi Kuwala Kwambiri Palibe   Palibe
Kutulutsa Ulusi wa Screw ≤500 cm⁻² N / A  
Kulongedza   Kaseti ya ma wafer ambiri kapena chidebe chimodzi cha ma wafer  

Kugwiritsa ntchito kwa SiC wafer

 

  • Ma Module a SiC Wafer Power a EV Inverters
    Ma MOSFET ndi ma diode okhala ndi SiC wafer omangidwa pa ma substrates apamwamba a SiC wafer amapereka kutayika kochepa kwambiri kwa switching. Pogwiritsa ntchito ukadaulo wa SiC wafer, ma module amphamvu awa amagwira ntchito pamagetsi ndi kutentha kwakukulu, zomwe zimathandiza kuti ma inverter ogwiritsira ntchito mphamvu agwire bwino ntchito. Kuphatikiza ma SiC wafer dies mu magawo amphamvu kumachepetsa kuzizira ndi kutsika kwa malo, kuwonetsa kuthekera konse kwa SiC wafer innovation.

  • Zipangizo za RF ndi 5G Zothamanga Kwambiri pa SiC Wafer
    Ma amplifiers a RF ndi ma switch opangidwa pa nsanja za SiC wafer zomwe zimateteza kutentha kwambiri zimawonetsa kutentha kwapamwamba komanso mphamvu yowononga. SiC wafer substrate imachepetsa kutayika kwa dielectric pama frequency a GHz, pomwe mphamvu ya SiC wafer imalola kugwira ntchito bwino pansi pa mphamvu yayikulu komanso kutentha kwambiri - zomwe zimapangitsa SiC wafer kukhala substrate yosankhidwa ya malo oyambira a 5G ndi machitidwe a radar a mbadwo wotsatira.

  • Ma Substrate a Optoelectronic ndi LED ochokera ku SiC Wafer
    Ma LED abuluu ndi UV omwe amamera pa SiC wafer substrates amapindula ndi kufananiza bwino kwa lattice ndi kutentha. Kugwiritsa ntchito C-face SiC wafer wopukutidwa kumaonetsetsa kuti zigawo zofanana za epitaxial zimagwirizana, pomwe kuuma kwa SiC wafer kumathandiza kuti ma wafer ang'onoang'ono achepetse komanso kuyika zida zodalirika. Izi zimapangitsa SiC wafer kukhala nsanja yogwiritsidwa ntchito kwambiri pakugwiritsa ntchito ma LED amphamvu komanso amoyo wonse.

Mafunso ndi Mayankho a SiC wafer

1. Q: Kodi ma wafer a SiC amapangidwa bwanji?


A:

Ma wafer a SiC opangidwaMasitepe Otsatizana

  1. Ma wafer a SiCKukonzekera Zinthu Zopangira

    • Gwiritsani ntchito ufa wa SiC wa ≥5N-grade (zosayera ≤1 ppm).
    • Sefa ndi kuphika pasadakhale kuti muchotse zotsalira za kaboni kapena nayitrogeni.

  1. SiCKukonzekera kwa Kristalo wa Mbeu

    • Tengani chidutswa cha kristalo imodzi ya 4H-SiC, dulani motsatira 〈0001〉 molunjika mpaka ~10 × 10 mm².

    • Kupukuta kolondola mpaka Ra ≤0.1 nm ndi kuyika chizindikiro cha kristalo.

  2. SiCKukula kwa PVT (Kuyendetsa Nthunzi Yathupi)

    • Ikani graphite crucible: pansi ndi ufa wa SiC, pamwamba ndi kristalo wa mbewu.

    • Tulukani ku 10⁻³–10⁻⁵ Torr kapena sungani ndi helium yoyera kwambiri pa 1 atm.

    • Tenthetsani malo oyambira kufika pa 2100–2300 ℃, sungani malo ozizira a mbeu 100–150 ℃.

    • Sinthani kuchuluka kwa kukula kwa 1–5 mm/h kuti muyeze bwino ubwino ndi mphamvu yamagetsi.

  3. SiCIngot Annealing

    • Ikani SiC ingot yomwe yakula pa 1600–1800 ℃ kwa maola 4–8.

    • Cholinga: kuchepetsa kupsinjika kwa kutentha ndikuchepetsa kuchulukana kwa dislocation.

  4. SiCKudula kwa Wafer

    • Gwiritsani ntchito chocheka cha waya wa diamondi kudula ingot m'ma wafers okhuthala a 0.5–1 mm.

    • Chepetsani kugwedezeka ndi mphamvu ya mbali kuti mupewe ming'alu yaying'ono.

  5. SiCWaferKupera ndi Kupukuta

    • Kupera kolimbakuchotsa kuwonongeka kwa kudula (kukhwima ~10–30 µm).

    • Kupera bwinokuti ufike pamlingo wosalala wa ≤5 µm.

    • Kupukuta kwa Mankhwala ndi Makina (CMP)kuti ifike kumapeto kofanana ndi galasi (Ra ≤0.2 nm).

  6. SiCWaferKuyeretsa ndi Kuyang'anira

    • Kuyeretsa kwa akupangamu Piranha solution (H₂SO₄:H₂O₂), DI madzi, kenako IPA.

    • XRD/Raman spectroscopykutsimikizira polytype (4H, 6H, 3C).

    • Interferometrykuyeza kusalala (<5 µm) ndi kupotoka (<20 µm).

    • Chofufuzira cha mfundo zinayikuyesa kukana (monga HPSI ≥10⁹ Ω·cm).

    • Kuyang'anira bwino zolakwikapogwiritsa ntchito maikulosikopu yowala yokhala ndi polarized ndi choyesera kukwapula.

  7. SiCWaferKugawa ndi Kusanja

    • Sankhani ma wafers motsatira polytype ndi mtundu wamagetsi:

      • Mtundu wa 4H-SiC N (4H-N): kuchuluka kwa chonyamulira 10¹⁶–10¹⁸ cm⁻³

      • 4H-SiC High Purity Semi-Insulating (4H-HPSI): resistivity ≥10⁹ Ω·cm

      • Mtundu wa 6H-SiC N (6H-N)

      • Zina: 3C-SiC, P-type, ndi zina zotero.

  8. SiCWaferKulongedza ndi Kutumiza

    • Ikani m'mabokosi oyera, opanda fumbi.

    • Lembani bokosi lililonse ndi mainchesi, makulidwe, polytype, resistivity grade, ndi batch number.

      Ma wafer a SiC

2. Q: Kodi ubwino waukulu wa ma wafer a SiC ndi wotani poyerekeza ndi ma wafer a silicon?


A: Poyerekeza ndi ma wafer a silicon, ma wafer a SiC amalola:

  • Kugwira ntchito kwamagetsi okwera(>1,200 V) yokhala ndi kukana kochepa.

  • Kukhazikika kwa kutentha kwambiri(>300 °C) ndi kayendetsedwe kabwino ka kutentha.

  • Kuthamanga mwachangu kosinthirandi kutayika kochepa kwa kusintha, kuchepetsa kuzizira kwa dongosolo ndi kukula kwa ma power converters.

4. Q: Ndi zolakwika ziti zomwe zimafala zomwe zimakhudza kuchuluka ndi magwiridwe antchito a SiC wafer?


Yankho: Zolakwika zazikulu mu ma wafer a SiC ndi monga ma micropipes, kusokonekera kwa basal plane (BPDs), ndi kukwawa pamwamba. Ma micropipes angayambitse kulephera kwakukulu kwa chipangizo; Ma BPD amawonjezera kukana pakapita nthawi; ndipo kukwawa pamwamba kumapangitsa kuti wafer isasweke kapena kukula koipa kwa epitaxial. Chifukwa chake, kuyang'anira mwamphamvu ndi kuchepetsa zolakwika ndikofunikira kuti SiC wafer ikule bwino.

Nthawi yotumizira: Juni-30-2025
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