1. Mawu Oyamba
Ngakhale zaka zambiri zafukufuku, heteroepitaxial 3C-SiC yokulirapo pa silicon substrates sinapezebe mtundu wokwanira wa kristalo pazogwiritsa ntchito zamagetsi zamagetsi. Kukula kumachitika pagawo la Si(100) kapena Si(111), chilichonse chikuwonetsa zovuta zake: madera odana ndi gawo la (100) ndikuphwanya (111). Ngakhale mafilimu opangidwa ndi [111] amawonetsa makhalidwe abwino monga kuchepa kwa chilema, kusinthika kwapangidwe kapamwamba, ndi kupanikizika kochepa, machitidwe ena monga (110) ndi (211) amakhalabe osaphunzira. Zomwe zilipo zikusonyeza kuti kukula kwabwino kungakhale kongoyang'ana, kusokoneza kufufuza mwadongosolo. Makamaka, kugwiritsidwa ntchito kwa magawo apamwamba a Miller-index Si (mwachitsanzo, (311), (510))) kwa 3C-SiC heteroepitaxy sikunanenepo, kusiya malo ofunikira ofufuza kafukufuku wokhudzana ndi njira zakukulira zomwe zimadalira.
2. Zoyesera
Zigawo za 3C-SiC zidayikidwa kudzera mumlengalenga-pressure chemical vapor deposition (CVD) pogwiritsa ntchito mpweya wotsogola wa SiH4/C3H8/H2. Magawowo anali 1 cm² Si wafer okhala ndi mawonekedwe osiyanasiyana: (100), (111), (110), (211), (311), (331), (510), (553), ndi (995). Magawo onse anali on-axis kupatula (100), pomwe ma 2 ° odulidwa odulidwa adayesedwanso. Kuyeretsa kusanachitike kukula kunkakhudza akupanga degreasing mu methanol. Kukula protocol ankakhala mbadwa kuchotsedwa okusayidi kudzera H2 annealing pa 1000 ° C, kutsatiridwa ndi muyezo masitepe awiri ndondomeko: carburization kwa mphindi 10 pa 1165 ° C ndi 12 sccm C3H8, ndiye epitaxy kwa mphindi 60 pa 1350 ° C (C / Si chiŵerengero = 4) pogwiritsa ntchito 2 sccm 8 Siccm 4 ndi 1.5 sccm H4. Kukula kulikonse kumaphatikizapo magawo anayi kapena asanu osiyanasiyana a Si, okhala ndi chophatikizira chimodzi (100).
3. Zotsatira ndi Zokambirana
Mapangidwe a zigawo za 3C-SiC zomwe zimakula pamagulu osiyanasiyana a Si (mkuyu. 1) adawonetsa mawonekedwe owoneka bwino komanso ovuta. Zowoneka, zitsanzo zomwe zidakula pa Si(100), (211), (311), (553), ndi (995) zidawoneka ngati galasi, pomwe zina zidachokera ku milky (331), (510)) mpaka kuzimiririka ((110), (111)). Malo osalala kwambiri (owonetsa mawonekedwe abwino kwambiri) adapezedwa pa (100) 2 ° off ndi (995) magawo. Chochititsa chidwi, zigawo zonse zidakhalabe zopanda ming'alu pambuyo pozizira, kuphatikizapo 3C-SiC (111) yomwe imakhala yovuta kwambiri. Kukula kochepa kwachitsanzo kutha kulepheretsa kusweka, ngakhale zitsanzo zina zikuwonetsa kugwada (kutembenuka kwa 30-60 μm kuchokera pakati kupita m'mphepete) zowoneka pansi pa ma microscope pa 1000 × magnification chifukwa cha kupsinjika kwamafuta. Zigawo zoweramira kwambiri zomwe zidakulitsidwa pa Si(111), (211), ndi (553) zokhala ndi mawonekedwe opindika owonetsa kupsinjika, zomwe zimafunikira ntchito yoyesera komanso yaukadaulo kuti igwirizane ndi mawonekedwe a crystallographic.
Chithunzi 1 chikufotokozera mwachidule zotsatira za XRD ndi AFM (kujambula pa 20 × 20 μ m2) za zigawo za 3C-SC zomwe zakula pa magawo a Si okhala ndi maonekedwe osiyanasiyana.
Zithunzi za Atomic Force Microscopy (AFM) (mkuyu 2) zovomerezeka zowonera. Mizu-mean-square (RMS) idatsimikizira malo osalala kwambiri pa (100)2° off ndi (995) ma substrates, okhala ndi zomangira zokhala ndi 400-800 nm lateral dimensions. Chosanjikiza (110) -chokula chinali choyipa kwambiri, pomwe zotalikirana ndi / kapena zofananira zokhala ndi malire akuthwa nthawi zina zidawonekera mumayendedwe ena ((331), (510)). X-ray diffraction (XRD) θ-2θ scans (yofotokozedwa mwachidule mu Table 1) inawonetsa heteroepitaxy yopambana ya substrates ya Miller-index, kupatula Si(110) yomwe inawonetsa 3C-SiC (111) yosakanikirana (111) ndi (110) nsonga zosonyeza polycrystallinity. Kusakanikirana kumeneku kunanenedwapo kale kwa Si(110), ngakhale kafukufuku wina adawona 3C-SiC yokhayokha (111), kuwonetsa kukhathamiritsa kwa kukula ndikofunikira. Kwa ma indices a Miller ≥5 ((510), (553), (995)), palibe nsonga za XRD zomwe zidapezeka mumayendedwe okhazikika a θ-2θ popeza ndege zolozera kwambiri izi sizikusiyana mu geometry iyi. Kusapezeka kwa nsonga zotsika za 3C-SiC (mwachitsanzo, (111), (200)) zikuwonetsa kukula kwa kristalo umodzi, kumafuna kupendekera kwachitsanzo kuti azindikire kusiyana kwa ndege zotsika.
Chithunzi 2 chikuwonetsa kuwerengera kwa ngodya ya ndege mkati mwa mawonekedwe a kristalo a CFC.
Ma angles owerengeka a crystallographic pakati pa maulendo apamwamba ndi otsika kwambiri (Table 2) amasonyeza misorientations yaikulu (> 10 °), kufotokoza kusowa kwawo muzitsulo za θ-2θ. Kusanthula kwa chiwerengerocho kunachitika pa chitsanzo (995) chifukwa cha mawonekedwe ake osazolowereka a granular (mwina kuchokera ku kukula kwa columnar kapena kuphatikizika) komanso kutsika kwamphamvu. Zithunzi za (111) zamtengo (mkuyu 3) kuchokera ku gawo la Si ndi 3C-SiC wosanjikiza zinali pafupifupi zofanana, kutsimikizira kukula kwa epitaxial popanda mapasa. Malo apakati adawonekera pa χ≈15 °, kufananiza ndingongole ya theoretical (111) - (995). Mawanga atatu ofanana ndi ofanana adawonekera pamalo omwe amayembekezeredwa (χ=56.2°/φ=269.4°, χ=79°/φ=146.7° ndi 33.6°), ngakhale kuti malo ofooka osadziwika bwino pa χ=62°/φ=93.3° amafunikira kufufuza kwina. Ubwino wa crystalline, wowunikiridwa kudzera m'lifupi mwake mu φ-masikidwe, umawoneka wolimbikitsa, ngakhale miyeso yopindika imafunikira kuti muyesedwe. Ziwerengero za (510) ndi (553) zitsalira kuti zitsirize kuti zitsimikizidwe kuti ali ndi epitaxial.
Chithunzi 3 chikuwonetsa chithunzi chapamwamba cha XRD cholembedwa pa chitsanzo (995), chomwe chikuwonetsa (111) ndege za gawo la Si (a) ndi 3C-SiC wosanjikiza (b).
4. Mapeto
Kukula kwa Heteroepitaxial 3C-SiC kunapambana pamayendedwe ambiri a Si kupatula (110), omwe adapereka zinthu za polycrystalline. Si(100)2° off ndi (995) ma substrates adapanga magawo osalala kwambiri (RMS <1 nm), pomwe (111), (211), ndi (553) adawonetsa kugwada kwakukulu (30-60 μm). Magawo okhala ndi index yayikulu amafunikira mawonekedwe apamwamba a XRD (mwachitsanzo, ziwerengero) kuti atsimikizire epitaxy chifukwa kulibe nsonga za θ-2θ. Ntchito yopitilirapo imaphatikizapo kuyeza kokhotakhota, kusanthula kupsinjika kwa Raman, ndi kukulitsa kumayendedwe owonjezera apamwamba kuti amalize kafukufukuyu.
Monga chopanga chophatikizika chophatikizika, XKH imapereka ntchito zosinthidwa makonda zokhala ndi ma silicon carbide substrates, opereka mitundu yokhazikika komanso yapadera kuphatikiza 4H/6H-N, 4H-Semi, 4H/6H-P, ndi 3C-SiC, yopezeka m'mimba mwake kuchokera pa 2-inchi mpaka 12-inchi. Ukadaulo wathu wakumapeto pakukula kwa kristalo, makina olondola, komanso kutsimikizika kwamtundu umatsimikizira mayankho ogwirizana amagetsi amagetsi, RF, ndi mapulogalamu omwe akubwera.
Nthawi yotumiza: Aug-08-2025