Zida za semiconductor zasintha kudzera m'mibadwo itatu yosinthika:
1st Gen (Si/Ge) adayika maziko amagetsi amakono,
2nd Gen (GaAs/InP) idadutsa zotchinga za optoelectronic ndi ma frequency apamwamba kuti ayambitse kusintha kwa chidziwitso,
3rd Gen (SiC/GaN) tsopano ikulimbana ndi zovuta zamphamvu komanso zachilengedwe, zomwe zimapangitsa kusalowerera ndale kwa kaboni ndi nthawi ya 6G.
Kupititsa patsogolo uku kukuwonetsa kusintha kwa paradigm kuchoka ku zinthu zambiri kupita ku ukatswiri wa sayansi ya zinthu.
1. Ma Semiconductors a M'badwo Woyamba: Silicon (Si) ndi Germanium (Ge)
Mbiri Yakale
Mu 1947, Bell Labs anapanga germanium transistor, kusonyeza kuyamba kwa nyengo ya semiconductor. Pofika zaka za m'ma 1950, silicon pang'onopang'ono inalowa m'malo mwa germanium monga maziko a mabwalo ophatikizika (ICs) chifukwa cha kusanjika kwake kwa oxide (SiO₂) komanso malo ambiri osungira zachilengedwe.
Zinthu Zakuthupi
ⅠBandgap:
Germanium: 0.67eV (yopapatiza bandgap, sachedwa kutayikira pakali pano, kusachita bwino kwa kutentha kwambiri).
Silicon: 1.12eV (indirect bandgap, yoyenera mabwalo omveka koma osatha kutulutsa kuwala).
Ⅱ,Ubwino wa Silicon:
Mwachilengedwe imapanga okusayidi wapamwamba kwambiri (SiO₂), yomwe imathandizira kupanga MOSFET.
Mtengo wotsika komanso wochuluka padziko lapansi (~ 28% ya crustal composition).
Ⅲ,Zolepheretsa:
Kuyenda kwa ma elekitironi otsika (1500 cm²/(V·s) kokha), kuletsa magwiridwe antchito apamwamba kwambiri.
Kulekerera kofooka kwamagetsi/kutentha (kutentha kwapamwamba kwambiri ~ 150°C).
Mapulogalamu Ofunika Kwambiri
Ⅰ,Mayendedwe Ophatikizidwa (ICs):
Ma CPU, tchipisi tokumbukira (mwachitsanzo, DRAM, NAND) amadalira silicon kuti aziphatikizana kwambiri.
Chitsanzo: Intel's 4004 (1971), microprocessor yoyamba yamalonda, amagwiritsa ntchito teknoloji ya silicon ya 10μm.
Ⅱ,Zida Zamagetsi:
Ma thyristors oyambirira ndi ma MOSFET otsika kwambiri (mwachitsanzo, magetsi a PC) anali opangidwa ndi silicon.
Zovuta & Kukalamba
Germanium idachotsedwa chifukwa cha kutayikira komanso kusakhazikika kwamafuta. Komabe, zoperewera za silicon mu ma optoelectronics ndi kugwiritsa ntchito mphamvu zambiri zidalimbikitsa chitukuko cha ma semiconductors amtsogolo.
2Second-Generation Semiconductors: Gallium Arsenide (GaAs) ndi Indium Phosphide (InP)
Mbiri Yachitukuko
M'zaka za m'ma 1970-1980s, madera omwe akutuluka monga mauthenga a m'manja, optical fiber networks, ndi teknoloji ya satana adapanga kufunikira kwakukulu kwa zipangizo zamakono komanso zogwira ntchito za optoelectronic. Izi zidayendetsa kupititsa patsogolo kwa ma semiconductors a bandgap monga ma GaAs ndi InP.
Zinthu Zakuthupi
Bandgap & Optoelectronic Performance:
Ma GaAs: 1.42eV (bandgap yolunjika, imathandizira kutulutsa kowala-kwabwino kwa ma lasers/LED).
InP: 1.34eV (yoyenera kugwiritsa ntchito kutalika kwa mawonekedwe akutali, mwachitsanzo, 1550nm fiber-optic communications).
Electron Mobility:
Ma GaAs amakwanitsa 8500 cm²/(V·s), kuposa silikoni (1500 cm²/(V·s)), kupangitsa kuti ikhale yabwino kwambiri pakusintha ma siginoloji a GHz.
Zoipa
lMagawo a Brittle: Zovuta kupanga kuposa silicon; Zophika za GaAs zimawononga 10 × zambiri.
lPalibe oxide wamba: Mosiyana ndi SiO₂ ya silicon, GaAs/InP ilibe ma oxide okhazikika, omwe amalepheretsa kupanga kwapamwamba kwa IC.
Mapulogalamu Ofunika Kwambiri
lRF Front-Ends:
Ma amplifiers amagetsi am'manja (PAs), ma transceivers a satellite (mwachitsanzo, ma transistors a HEMT a GaAs).
lOptoelectronics:
Laser diodes (ma CD/DVD drives), ma LED (red/infrared), fiber-optic modules (InP lasers).
lMaselo a Space Solar:
Maselo a GaAs amakwaniritsa bwino 30% (vs. ~ 20% ya silicon), yofunikira kwa ma satelayiti.
lTekinoloje Bottlenecks
Mitengo yokwera imatseketsa ma GaAs/InP ku mapulogalamu apamwamba kwambiri, kuwalepheretsa kuthamangitsa ulamuliro wa silicon mu tchipisi tamalingaliro.
Ma Semiconductors amtundu wachitatu (Wide-Bandgap Semiconductors): Silicon Carbide (SiC) ndi Gallium Nitride (GaN)
Oyendetsa Technology
Kusintha kwa Mphamvu: Magalimoto amagetsi ndi kuphatikizika kwa grid yamagetsi osinthika kumafunikira zida zamagetsi zamagetsi.
Zofunika Kwambiri: Kulumikizana kwa 5G ndi makina a radar amafunikira ma frequency apamwamba komanso kuchuluka kwa mphamvu.
Malo Azambiri: Magalimoto oyendetsa ndege ndi mafakitale amafunikira zida zomwe zimatha kupirira kutentha kopitilira 200 ° C.
Makhalidwe Azinthu
Ubwino wa Wide Bandgap:
lSiC: Bandgap ya 3.26eV, mphamvu yamagetsi yakuwonongeka 10 × ya silicon, yomwe imatha kupirira ma voltages opitilira 10kV.
lGaN: Bandgap ya 3.4eV, kuyenda kwa ma elekitironi kwa 2200 cm²/(V·s), kumachita bwino kwambiri pakuchita pafupipafupi.
Kasamalidwe ka Kutentha:
Kutentha kwa SiC kumafika ku 4.9 W/(cm·K), kuwirikiza katatu kuposa silicon, ndikupangitsa kuti ikhale yoyenera kugwiritsa ntchito mphamvu zambiri.
Zovuta Zakuthupi
SiC: Kukula kwapang'onopang'ono kwa kristalo imodzi kumafuna kutentha pamwamba pa 2000 ° C, zomwe zimapangitsa kuti zikhale zovuta zowonongeka komanso zotsika mtengo (6-inch SiC wafer ndi 20 × okwera mtengo kuposa silicon).
GaN: Ilibe gawo lachilengedwe, lomwe nthawi zambiri limafunikira heteroepitaxy pa safiro, SiC, kapena masinthidwe a silicon, zomwe zimapangitsa kuti pakhale vuto losagwirizana.
Mapulogalamu Ofunika Kwambiri
Zamagetsi Zamagetsi:
Ma inverters a EV (mwachitsanzo, Tesla Model 3 amagwiritsa ntchito SiC MOSFETs, kukonza bwino ndi 5-10%).
Masiteshoni/ma adapter othamangira (zida za GaN zimathandizira kuyitanitsa mwachangu 100W+ ndikuchepetsa kukula ndi 50%).
Zipangizo za RF:
5G base station power amplifiers (GaN-on-SiC PAs amathandizira ma frequency a mmWave).
Radar yankhondo (GaN imapereka 5 × mphamvu yamagetsi ya GaAs).
Optoelectronics:
Ma LED a UV (Zida za AlGaN zomwe zimagwiritsidwa ntchito pochotsa ndi kuzindikira zamadzi).
Mkhalidwe Wamakampani ndi Future Outlook
SiC imayang'anira msika wamagetsi apamwamba, okhala ndi ma module amagalimoto opangidwa kale, ngakhale ndalama zimakhalabe chotchinga.
GaN ikukula mwachangu pamagetsi ogula (kuthamangitsa mwachangu) ndi ntchito za RF, ikusintha kupita ku zowotcha za 8-inch.
Zida zomwe zikubwera monga gallium oxide (Ga₂O₃, bandgap 4.8eV) ndi diamondi (5.5eV) zitha kupanga "m'badwo wachinayi" wa semiconductors, kukankhira malire amagetsi kupitirira 20kV.
Kugwirizana ndi Synergy of Semiconductor Generations
Kukwanirana, Osati Kusintha M'malo:
Silicon imakhalabe yolamulira mu tchipisi tamalingaliro ndi zamagetsi zamagetsi (95% ya msika wapadziko lonse lapansi wa semiconductor).
Ma GaAs ndi InP amakhazikika pama frequency apamwamba komanso ma optoelectronic niches.
SiC/GaN ndizosasinthika pakugwiritsa ntchito mphamvu ndi mafakitale.
Zitsanzo Zophatikiza Zamakono:
GaN-on-Si: Amaphatikiza GaN ndi magawo a silicon otsika mtengo kuti azilipiritsa mwachangu komanso kugwiritsa ntchito ma RF.
Ma module osakanizidwa a SiC-IGBT: Sinthani magwiridwe antchito a gridi.
Future Trends:
Kuphatikizana kosiyanasiyana: Kuphatikiza zida (mwachitsanzo, Si + GaN) pa chip chimodzi kuti muchepetse magwiridwe antchito ndi mtengo wake.
Zida za bandgap zokulirapo (monga Ga₂O₃, diamondi) zitha kupangitsa kuti pakhale magetsi okwera kwambiri (>20kV) komanso kugwiritsa ntchito makompyuta amtundu wa quantum.
Zopanga zogwirizana
GaAs laser epitaxial wafer 4 inchi 6 inchi
12 inchi SIC gawo lapansi silikoni carbide wamkulu kalasi awiri 300mm lalikulu kukula 4H-N Oyenera mkulu mphamvu chipangizo kutentha dissipation
Nthawi yotumiza: May-07-2025