Kugwiritsa ntchito silicon carbide substrate yoyendetsa komanso yoteteza kutentha

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Chitsulo cha silicon carbide chimagawidwa m'magulu awiri: mtundu woteteza pang'ono ndi mtundu woyendetsa. Pakadali pano, kufotokozera kwakukulu kwa zinthu za silicon carbide zomwe zimateteza pang'ono ndi mainchesi 4. Mumsika wa silicon carbide woyendetsa, kufotokozera kwazinthu za substrate zomwe zikugwiritsidwa ntchito panopa ndi mainchesi 6.

Chifukwa cha ntchito zomwe zili pansi pa RF, ma substrates a SiC okhala ndi insulation yochepa komanso zinthu za epitaxial zimayendetsedwa ndi Unduna wa Zamalonda ku US. SiC yokhala ndi insulation yochepa ndiye chinthu chomwe chimakonda kwambiri pa GaN heteroepitaxy ndipo chili ndi mwayi wofunikira wogwiritsa ntchito m'ma microwave. Poyerekeza ndi kusiyana kwa kristalo kwa safiro 14% ndi Si 16.9%, kusiyana kwa kristalo kwa zinthu za SiC ndi GaN ndi 3.4% yokha. Kuphatikiza ndi kutentha kwambiri kwa SiC, zida zama microwave za LED ndi GaN zomwe zimakhala ndi mphamvu zambiri komanso zamagetsi amphamvu zomwe zimapangidwa nazo zimakhala ndi zabwino zambiri pa radar, zida zama microwave zamphamvu kwambiri komanso machitidwe olumikizirana a 5G.

Kafukufuku ndi chitukuko cha gawo la SiC lomwe lili ndi insulation yochepa nthawi zonse lakhala cholinga chachikulu cha kafukufuku ndi chitukuko cha gawo la SiC limodzi la kristalo. Pali mavuto awiri akuluakulu pakukula zipangizo za SiC zomwe zili ndi insulation yochepa:

1) Chepetsani kuipitsidwa kwa N komwe kumabwera chifukwa cha graphite crucible, kutentha kwa insulation adsorption ndi doping mu ufa;

2) Pamene akutsimikizira ubwino ndi mphamvu zamagetsi za kristalo, malo ozama kwambiri amayikidwa kuti alimbitse zinyalala zotsalazo ndi ntchito zamagetsi.

Pakadali pano, opanga omwe ali ndi mphamvu zopanga SiC zotetezedwa pang'ono ndi SICC Co,Semisic Crystal Co,Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.

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Krustalo wa SiC woyendetsa magetsi umapezeka poika nayitrogeni mumlengalenga womwe ukukula. Chotsukira cha silicon carbide choyendetsa magetsi chimagwiritsidwa ntchito kwambiri popanga zipangizo zamagetsi, zipangizo zamagetsi za silicon carbide zokhala ndi magetsi ambiri, mphamvu yamagetsi yapamwamba, kutentha kwambiri, kuchuluka kwa ma frequency ambiri, kutayika kochepa ndi zabwino zina zapadera, zidzasintha kwambiri kugwiritsa ntchito mphamvu zamagetsi pogwiritsa ntchito silicon, zili ndi mphamvu yofunikira komanso yokhudza kwambiri pakusintha mphamvu moyenera. Madera ofunikira kwambiri ndi magalimoto amagetsi/ma pile ochaja, mphamvu yatsopano ya photovoltaic, njira zoyendera njanji, gridi yanzeru ndi zina zotero. Chifukwa chakuti zinthu zoyendetsera magetsi zimakhala makamaka zida zamagetsi m'magalimoto amagetsi, photovoltaic ndi madera ena, njira yogwiritsira ntchito ndi yayikulu, ndipo opanga ndi ambiri.

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Mtundu wa kristalo wa silicon carbide: Kapangidwe kabwino ka kristalo wa silicon carbide wabwino kwambiri wa 4H kangagawidwe m'magulu awiri, limodzi ndi mtundu wa kristalo wa silicon carbide wa cubic silicon wa kapangidwe ka sphalerite, kotchedwa 3C-SiC kapena β-SiC, ndipo lina ndi kapangidwe ka hexagonal kapena diamondi ka kapangidwe ka nthawi yayikulu, komwe ndi kofanana ndi 6H-SiC, 4H-sic, 15R-SiC, ndi zina zotero, zomwe zimadziwika kuti α-SiC. 3C-SiC ili ndi ubwino wokhala ndi resistivity yayikulu pazida zopangira. Komabe, kusagwirizana kwakukulu pakati pa Si ndi SiC lattice constants ndi thermal expansion coefficients kungayambitse zolakwika zambiri mu 3C-SiC epitaxial layer. 4H-SiC ili ndi kuthekera kwakukulu popanga ma MOSFET, chifukwa njira zake zokulira ndi kukula kwa kristalo ndi epitaxial layer ndi zabwino kwambiri, ndipo pankhani ya kuyenda kwa ma elekitironi, 4H-SiC ndi yapamwamba kuposa 3C-SiC ndi 6H-SiC, zomwe zimapereka mawonekedwe abwino a microwave a ma 4H-SiC MOSFET.

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Nthawi yotumizira: Julayi-16-2024