Zida za silicon carbide (SiC) zoyera kwambiri zapezeka ngati zipangizo zabwino kwambiri zogwiritsira ntchito zinthu zofunika kwambiri m'mafakitale a semiconductor, aerospace, ndi mankhwala chifukwa cha kutentha kwawo kwapadera, kukhazikika kwa mankhwala, komanso mphamvu zamakanika. Chifukwa cha kufunikira kwakukulu kwa zida za ceramic zogwira ntchito bwino komanso zosawononga kwambiri, chitukuko cha ukadaulo wokonzekera bwino komanso wosavuta kukula wa zida za ceramic za SiC zoyera kwambiri chakhala cholinga chachikulu cha kafukufuku wapadziko lonse lapansi. Pepalali likuwunikanso njira zazikulu zamakono zokonzekera zida za ceramic za SiC zoyera kwambiri, kuphatikizapo recrystallization sintering, pressureless sintering (PS), hot pressing (HP), spark plasma sintering (SPS), ndi manufacturing a additive (AM), pogogomezera kukambirana za njira zoyeretsera, magawo ofunikira, katundu wazinthu, ndi zovuta zomwe zilipo panjira iliyonse.
Kugwiritsa ntchito SiC ceramics m'magulu ankhondo ndi mainjiniya
Pakadali pano, zida za ceramic za SiC zoyera kwambiri zimagwiritsidwa ntchito kwambiri pazida zopangira ma silicon wafer, zomwe zimagwira nawo ntchito zazikulu monga oxidation, lithography, etching, ndi ion implantation. Ndi kupita patsogolo kwa ukadaulo wa wafer, kukula kwa ma wafer kwakhala chizolowezi chachikulu. Kukula kwa ma wafer odziwika bwino pano ndi 300 mm, zomwe zimapangitsa kuti pakhale mgwirizano wabwino pakati pa mtengo ndi mphamvu zopangira. Komabe, motsogozedwa ndi Moore's Law, kupanga ma wafer a 450 mm kwakukulu kuli kale pa ndondomeko. Ma wafer akuluakulu nthawi zambiri amafunikira mphamvu zambiri kuti asagwedezeke ndi kusinthika, zomwe zikupititsa patsogolo kufunikira kwa zida za ceramic za SiC zazikulu, zolimba kwambiri, komanso zoyera kwambiri. M'zaka zaposachedwa, kupanga zowonjezera (3D printing), monga ukadaulo wofulumira wopanga ma prototyping womwe sufuna nkhungu, kwawonetsa kuthekera kwakukulu popanga zida za ceramic za SiC zovuta chifukwa cha kapangidwe kake ka layer-by-layer komanso luso losinthasintha, kukopa chidwi cha anthu ambiri.
Pepalali lidzasanthula mwadongosolo njira zisanu zokonzekera zoumba za SiC zoyera kwambiri—kubwezeretsanso kusungunula, kusungunula kopanda kupanikizika, kukanikiza kotentha, kusungunula kwa plasma, ndi kupanga zowonjezera—kuyang'ana kwambiri njira zawo zosungunula, njira zowongolera njira, magwiridwe antchito, ndi mwayi wogwiritsa ntchito mafakitale.
Zofunikira pa zinthu zopangira silicon carbide zoyera kwambiri
I. Kubwezeretsanso kwa Sintering
Silikoni carbide yobwezeretsedwanso (RSiC) ndi chinthu cha SiC choyera kwambiri chomwe chimapangidwa popanda kuipitsa chimathandiza kutentha kwambiri kwa 2100–2500°C. Kuyambira pamene Fredriksson adapeza koyamba njira yoipitsanso kumapeto kwa zaka za m'ma 1800, RSiC yatchuka kwambiri chifukwa cha malire ake oyera a tirigu komanso kusakhalapo kwa magalasi ndi zinyalala. Pa kutentha kwakukulu, SiC imawonetsa kuthamanga kwa nthunzi kwambiri, ndipo njira yake yoipitsa imakhudza makamaka njira yotulutsira nthunzi ndi madzi: tirigu wosalala umasanduka nthunzi ndikubwezeretsanso pamwamba pa tirigu wamkulu, zomwe zimapangitsa kuti khosi likule bwino komanso kulumikizana mwachindunji pakati pa tirigu, motero kumawonjezera mphamvu ya zinthuzo.
Mu 1990, Kriegesmann adakonza RSiC yokhala ndi kuchuluka kwa 79.1% pogwiritsa ntchito slip casting pa 2200°C, pomwe gawo lopingasa likuwonetsa kapangidwe kakang'ono kopangidwa ndi tinthu tating'onoting'ono ndi ma pores. Pambuyo pake, Yi et al. adagwiritsa ntchito gel casting kukonzekera matupi obiriwira ndikuwapaka pa 2450°C, kupeza RSiC ceramics yokhala ndi kuchuluka kwa 2.53 g/cm³ ndi mphamvu yopindika ya 55.4 MPa.
Kusweka kwa SEM pamwamba pa RSiC
Poyerekeza ndi SiC yokhuthala, RSiC ili ndi kachulukidwe kochepa (pafupifupi 2.5 g/cm³) ndi pafupifupi 20% yotseguka, zomwe zimalepheretsa magwiridwe ake pantchito yamphamvu kwambiri. Chifukwa chake, kukonza kachulukidwe ndi mphamvu za makina a RSiC kwakhala cholinga chachikulu chofufuza. Sung ndi anzake adapereka lingaliro lolowetsa silicon yosungunuka mu carbon/β-SiC mixed compacts ndikubwezeretsanso pa 2200°C, ndikupanga bwino kapangidwe ka netiweki kopangidwa ndi tinthu tating'onoting'ono ta α-SiC. RSiC yomwe idatsatira idapeza kachulukidwe ka 2.7 g/cm³ ndi mphamvu yosinthasintha ya 134 MPa, kusunga kukhazikika kwabwino kwa makina kutentha kwambiri.
Pofuna kupititsa patsogolo kuchulukana kwa zinthu, Guo ndi anzake adagwiritsa ntchito ukadaulo wa polymer infiltration ndi pyrolysis (PIP) pochiza RSiC m'njira zosiyanasiyana. Pogwiritsa ntchito njira za PCS/xylene ndi SiC/PCS/xylene slurries ngati zolowa m'madzi, pambuyo pa ma PIP cycles 3-6, kuchuluka kwa RSiC kudakwera kwambiri (mpaka 2.90 g/cm³), pamodzi ndi mphamvu yake yopindika. Kuphatikiza apo, adapereka njira yozungulira yophatikiza PIP ndi recrystallization: pyrolysis pa 1400°C kutsatiridwa ndi recrystallization pa 2400°C, kuchotsa bwino tinthu tomwe timatsekeka ndikuchepetsa porosity. Zipangizo zomaliza za RSiC zidapeza kuchulukana kwa 2.99 g/cm³ ndi mphamvu yopindika ya 162.3 MPa, zomwe zikuwonetsa magwiridwe antchito abwino kwambiri.
Zithunzi za SEM za kusintha kwa kapangidwe ka microstructure ka RSiC kopukutidwa pambuyo pa kuzungulira kwa polymer impregnation ndi pyrolysis (PIP): RSiC yoyamba (A), pambuyo pa kuzungulira koyamba kwa PIP-recrystallization (B), ndi pambuyo pa kuzungulira kwachitatu (C)
II. Kupopera Kopanda Kupanikizika
Zoumba za silicon carbide (SiC) zopanda mphamvu nthawi zambiri zimapangidwa pogwiritsa ntchito ufa wa SiC woyeretsedwa kwambiri, wosalala kwambiri ngati zopangira, ndi zinthu zochepa zothandizira kusungunula, ndikuzisungunula mumlengalenga wopanda mpweya kapena vacuum pa 1800–2150°C. Njirayi ndi yoyenera kupanga zida zazikulu komanso zovuta za ceramic. Komabe, popeza SiC imagwirizana kwambiri, kuchuluka kwake kodzigawirako kumakhala kochepa kwambiri, zomwe zimapangitsa kuti kukhuthala kukhale kovuta popanda zothandizira kusungunula.
Kutengera ndi njira yopangira sintering, sintering yopanda kupanikizika ingagawidwe m'magulu awiri: sintering yopanda kupanikizika yamadzimadzi (PLS-SiC) ndi sintering yopanda kupanikizika ya solid-state (PSS-SiC).
1.1 PLS-SiC (Kuchotsa Madzi M'magawo Osiyanasiyana)
PLS-SiC nthawi zambiri imasiyidwa pansi pa 2000°C powonjezera pafupifupi 10 wt.% ya zinthu zothandizira kupopera madzi (monga Al₂O₃, CaO, MgO, TiO₂, ndi ma oxides achilengedwe a RE₂O₃) kuti apange gawo lamadzimadzi, zomwe zimapangitsa kuti tinthu timene timene timakhalamo tizitha kupopera madzi komanso kuti tipeze kuchuluka kwa madzi. Njirayi ndi yoyenera kugwiritsa ntchito zinthu za SiC za mafakitale, koma sipanakhale malipoti akuti SiC yoyera kwambiri imapezeka kudzera mu kupopera madzi.
1.2 PSS-SiC (Kuyimitsa Simenti Yolimba)
PSS-SiC imaphatikizapo kukhuthala kwa solid-state kutentha kopitilira 2000°C ndi pafupifupi 1 wt.% ya zowonjezera. Njirayi imadalira kwambiri kufalikira kwa atomiki ndi kukonzanso kwa tirigu komwe kumachitika chifukwa cha kutentha kwakukulu kuti achepetse mphamvu ya pamwamba ndikukwaniritsa kukhuthala. Dongosolo la BC (boron-carbon) ndi kuphatikiza kofala kwa zowonjezera, komwe kumatha kuchepetsa mphamvu ya malire a tirigu ndikuchotsa SiO₂ pamwamba pa SiC. Komabe, zowonjezera zachikhalidwe za BC nthawi zambiri zimayambitsa zodetsa zotsalira, zomwe zimachepetsa kuyera kwa SiC.
Mwa kulamulira kuchuluka kwa zowonjezera (B 0.4 wt.%, C 1.8 wt.%) ndikuwotcha pa 2150°C kwa maola 0.5, zida za SiC zoyera kwambiri zokhala ndi chiyero cha 99.6 wt.% ndi kuchuluka kwa 98.4% zidapezeka. Kapangidwe ka microstructure kanawonetsa tinthu ta columnar (timodzi toposa 450 µm kutalika), tokhala ndi ma pores ang'onoang'ono m'malire a tirigu ndi tinthu ta graphite mkati mwa tirigu. Zida za ceramic zinawonetsa mphamvu yopindika ya 443 ± 27 MPa, modulus yosalala ya 420 ± 1 GPa, ndi coefficient ya expansion ya 3.84 × 10⁻⁶ K⁻¹ pa kutentha kwa chipinda mpaka 600°C, zomwe zikuwonetsa magwiridwe antchito abwino kwambiri.
Kapangidwe kakang'ono ka PSS-SiC: (A) Chithunzi cha SEM pambuyo popukuta ndi NaOH etching; (BD) Zithunzi za BSD pambuyo popukuta ndi etching
III. Kukanikiza Kotentha
Kukanikiza kotentha (HP) ndi njira yochulukitsira mphamvu yomwe nthawi imodzi imagwiritsa ntchito kutentha ndi kupanikizika kwa uniaxial ku zinthu zaufa pansi pa kutentha kwambiri komanso kupanikizika kwambiri. Kupanikizika kwakukulu kumalepheretsa kwambiri mapangidwe a ma pore ndikuchepetsa kukula kwa tirigu, pomwe kutentha kwambiri kumalimbikitsa kusakanikirana kwa tirigu ndi mapangidwe a nyumba zokhuthala, pamapeto pake kupanga zinthu za SiC zokhuthala kwambiri komanso zoyera kwambiri. Chifukwa cha momwe kukanikiza kumayendera, njirayi imayambitsa anisotropy ya tirigu, zomwe zimakhudza mphamvu zamakina ndi kuvala.
Ma ceramic a SiC oyera ndi ovuta kuwakulitsa popanda zowonjezera, zomwe zimafuna kupopera kwamphamvu kwambiri. Nadeau ndi anzake adakonza bwino SiC yokhuthala popanda zowonjezera pa 2500°C ndi 5000 MPa; Sun ndi anzake adapeza zinthu zambiri za β-SiC zokhala ndi kuuma kwa Vickers mpaka 41.5 GPa pa 25 GPa ndi 1400°C. Pogwiritsa ntchito kupanikizika kwa 4 GPa, ma ceramic a SiC okhala ndi kuuma kwa pafupifupi 98% ndi 99%, kuuma kwa 35 GPa, ndi modulus yosalala ya 450 GPa adakonzedwa pa 1500°C ndi 1900°C, motsatana. Ufa wa SiC wopopera wa micron pa 5 GPa ndi 1500°C udapanga ma ceramic okhala ndi kuuma kwa 31.3 GPa ndi kuuma kwa 98.4%.
Ngakhale zotsatirazi zikusonyeza kuti kupanikizika kwakukulu kungapangitse kuti zinthu zisachuluke popanda zowonjezera, zovuta komanso mtengo wokwera wa zida zofunika zimalepheretsa ntchito zamafakitale. Chifukwa chake, pokonzekera, zowonjezera kapena ufa nthawi zambiri zimagwiritsidwa ntchito kuonjezera mphamvu yoyendetsera zinthu.
Mwa kuwonjezera 4 wt.% phenolic resin ngati chowonjezera ndi choyeretsera pa 2350°C ndi 50 MPa, SiC ceramics yokhala ndi kuchuluka kwa densification kwa 92% ndi chiyero cha 99.998% idapezeka. Pogwiritsa ntchito kuchuluka kocheperako kowonjezera (boric acid ndi D-fructose) ndi choyeretsera pa 2050°C ndi 40 MPa, SiC yoyera kwambiri yokhala ndi kuchuluka kocheperako >99.5% ndi zomwe zili mu B yotsalira ya 556 ppm yokha idakonzedwa. Zithunzi za SEM zidawonetsa kuti, poyerekeza ndi zitsanzo zopanda kupanikizika, zitsanzo zotenthedwa zinali ndi tinthu tating'onoting'ono, ma pores ochepa, komanso kuchuluka kwakukulu. Mphamvu yopindika inali 453.7 ± 44.9 MPa, ndipo modulus yosalala idafika 444.3 ± 1.1 GPa.
Mwa kuwonjezera nthawi yosungira pa 1900°C, kukula kwa tirigu kunawonjezeka kuchoka pa 1.5 μm kufika pa 1.8 μm, ndipo mphamvu ya kutentha inakwera kuchoka pa 155 kufika pa 167 W·m⁻¹·K⁻¹, komanso kumawonjezera kukana dzimbiri kwa plasma.
Pansi pa mikhalidwe ya 1850°C ndi 30 MPa, kukanikiza kotentha komanso kukanikiza mwachangu kwa ufa wa SiC wokhuthala komanso wothira mafuta kunapanga zoumba za β-SiC zokhuthala popanda zowonjezera, zokhala ndi kachulukidwe ka 3.2 g/cm³ ndi kutentha kotsika kwa 150–200°C poyerekeza ndi njira zachikhalidwe. Zoumba za ceramic zinali ndi kuuma kwa 2729 GPa, kulimba kwa kusweka kwa 5.25–5.30 MPa·m^1/2, komanso kukana kwabwino kwambiri kwa kukanda (kuchuluka kwa kukanda kwa 9.9 × 10⁻¹⁰ s⁻¹ ndi 3.8 × 10⁻⁹ s⁻¹ pa 1400°C/1450°C ndi 100 MPa).
(A) Chithunzi cha SEM cha pamwamba popukutidwa; (B) Chithunzi cha SEM cha pamwamba posweka; (C, D) Chithunzi cha BSD cha pamwamba popukutidwa
Mu kafukufuku wosindikiza wa 3D wa zoumba za piezoelectric, matope a ceramic, monga chinthu chachikulu chomwe chimakhudza kapangidwe ndi magwiridwe antchito, chakhala chofunikira kwambiri mdziko muno komanso padziko lonse lapansi. Kafukufuku wapano nthawi zambiri akuwonetsa kuti magawo monga kukula kwa tinthu ta ufa, kukhuthala kwa matope, ndi kuchuluka kolimba kumakhudza kwambiri mtundu wa mapangidwe ndi mawonekedwe a piezoelectric a chinthu chomaliza.
Kafukufuku wapeza kuti ma ceramic slurry okonzedwa pogwiritsa ntchito ufa wa barium titanate wa micron-, submicron-, ndi nano-size amasonyeza kusiyana kwakukulu mu njira za stereolithography (monga, LCD-SLA). Pamene kukula kwa tinthu tating'onoting'ono kumachepa, kukhuthala kwa slurry kumawonjezeka kwambiri, ndi ufa wa nano-size womwe umapanga ma slurry okhala ndi kukhuthala kofika mabiliyoni a mPa·s. Ma slurry okhala ndi ufa wa micron-size amatha kuchotsedwa ndi kuchotsedwa posindikiza, pomwe ufa wa submicron ndi nano-size umasonyeza khalidwe lokhazikika lopanga. Pambuyo pa kutentha kwambiri, zitsanzo za ceramic zomwe zapezekazo zinapeza kuchuluka kwa 5.44 g/cm³, coefficient ya piezoelectric (d₃₃) ya pafupifupi 200 pC/N, ndi zinthu zochepa zotayika, zomwe zimasonyeza mphamvu zabwino kwambiri zamagetsi.
Kuphatikiza apo, mu njira zazing'ono za stereolithography, kusintha kuchuluka kwa zinthu zolimba za PZT-type slurries (monga, 75 wt.%) kunapanga matupi osungunuka okhala ndi kachulukidwe ka 7.35 g/cm³, zomwe zinapangitsa kuti piezoelectric ikhale yolimba mpaka 600 pC/N pansi pa minda yamagetsi yozungulira. Kafukufuku wokhudza kusinthika kwa ma micro-scale deformation adathandizira kwambiri kulondola kwa mapangidwe, ndikuwonjezera kulondola kwa geometry ndi 80%.
Kafukufuku wina pa zoumba za piezoelectric za PMN-PT wasonyeza kuti zinthu zolimba zimakhudza kwambiri kapangidwe ka ceramic ndi mphamvu zamagetsi. Pa 80 wt.% ya zinthu zolimba, zinthu zina zinawonekera mosavuta mu zoumba; pamene zinthu zolimba zinawonjezeka kufika pa 82 wt.% ndi kupitirira apo, zinthu zina zinatha pang'onopang'ono, ndipo kapangidwe ka ceramic kanakhala koyera, ndi magwiridwe antchito abwino kwambiri. Pa 82 wt.%, zoumba za ceramic zinawonetsa mphamvu zamagetsi zabwino kwambiri: piezoelectric constant ya 730 pC/N, relative permittivity ya 7226, ndi dielectric loss ya 0.07 yokha.
Mwachidule, kukula kwa tinthu tating'onoting'ono, kuchuluka kolimba, ndi mawonekedwe a rheological a slurry za ceramic sizimangokhudza kukhazikika ndi kulondola kwa njira yosindikizira komanso zimazindikira mwachindunji kuchuluka ndi kuyankhidwa kwa piezoelectric kwa matupi osungunuka, zomwe zimapangitsa kuti zikhale zofunikira kwambiri kuti zikwaniritse ma piezoelectric ceramics osindikizidwa bwino a 3D.
Njira yayikulu yosindikizira zitsanzo za BT/UV mu LCD-SLA 3D
Katundu wa zoumba za PMN-PT zokhala ndi zinthu zosiyanasiyana zolimba
IV. Kutulutsa Madzi a Plasma
Kupopera kwa plasma (SPS) ndi ukadaulo wapamwamba wopopera womwe umagwiritsa ntchito mphamvu yamagetsi ndi mphamvu yamakina yomwe imagwiritsidwa ntchito nthawi imodzi ku ufa kuti ikwaniritse kuchulukana mwachangu. Munjira iyi, mphamvu yamagetsi imatenthetsa mwachindunji nkhungu ndi ufa, ndikupanga kutentha kwa Joule ndi plasma, zomwe zimathandiza kuti popera bwino pakhale nthawi yochepa (nthawi zambiri mkati mwa mphindi 10). Kutentha mwachangu kumalimbikitsa kufalikira kwa pamwamba, pomwe kutulutsa kwa spark kumathandiza kuchotsa mpweya wodetsedwa ndi zigawo za oxide pamalo a ufa, ndikuwonjezera magwiridwe antchito a popera. Mphamvu ya electromigration yomwe imabwera chifukwa cha minda yamagetsi imawonjezeranso kufalikira kwa ma atomu.
Poyerekeza ndi kukanikiza kwachikhalidwe kwa kutentha, SPS imagwiritsa ntchito kutentha mwachindunji, zomwe zimathandiza kuti kutentha kukhale kochepa komanso kuletsa kukula kwa tirigu kuti apange zinthu zazing'ono komanso zofanana. Mwachitsanzo:
- Popanda zowonjezera, pogwiritsa ntchito ufa wa SiC wophwanyidwa ngati zinthu zopangira, kusungunula pa 2100°C ndi 70 MPa kwa mphindi 30 kunapereka zitsanzo zokhala ndi kuchuluka kwa 98%.
- Kupopera pa 1700°C ndi 40 MPa kwa mphindi 10 kunapanga cubic SiC yokhala ndi 98% density ndi kukula kwa tirigu wa 30–50 nm yokha.
- Kugwiritsa ntchito ufa wa 80 µm granular SiC ndi sintering pa 1860°C ndi 50 MPa kwa mphindi 5 kunapangitsa kuti SiC ceramics ikhale yogwira ntchito bwino kwambiri yokhala ndi 98.5% relative density, Vickers microhardness ya 28.5 GPa, flexural strength ya 395 MPa, ndi fracture strong ya 4.5 MPa·m^1/2.
Kusanthula kwa kapangidwe ka zinthu kunasonyeza kuti pamene kutentha kwa zinthu zotentha kunakwera kuchoka pa 1600°C mpaka 1860°C, kufooka kwa zinthu kunachepa kwambiri, kufika pa kuchuluka kwathunthu pa kutentha kwakukulu.
Kapangidwe kakang'ono ka zoumba za SiC zomwe zimatenthedwa kutentha kosiyanasiyana: (A) 1600°C, (B) 1700°C, (C) 1790°C ndi (D) 1860°C
V. Kupanga Zowonjezera
Kupanga zinthu zowonjezera (AM) posachedwapa kwawonetsa kuthekera kwakukulu popanga zinthu zovuta za ceramic chifukwa cha njira yake yopangira zinthu za layer-by-layer. Pa ma ceramic a SiC, ukadaulo wambiri wa AM wapangidwa, kuphatikizapo binder jetting (BJ), 3DP, selective laser sintering (SLS), direct ink writing (DIW), ndi stereolithography (SL, DLP). Komabe, 3DP ndi DIW zili ndi kulondola kochepa, pomwe SLS imakonda kuyambitsa kutentha ndi ming'alu. Mosiyana ndi zimenezi, BJ ndi SL zimapereka ubwino waukulu popanga ma ceramic ovuta kwambiri komanso olondola kwambiri.
- Kutumiza Binder (BJ)
Ukadaulo wa BJ umaphatikizapo kupopera ufa wa binder ku bond, kutsatiridwa ndi kuchotsa ndi kusungunula kuti mupeze chinthu chomaliza cha ceramic. Kuphatikiza BJ ndi chemical vapor infiltration (CVI), ma ceramics a SiC opangidwa ndi crystalline apamwamba komanso opangidwa ndi crystalline adakonzedwa bwino. Njirayi ikuphatikizapo:
① Kupanga matupi obiriwira a SiC ceramic pogwiritsa ntchito BJ.
② Kukhuthala kudzera mu CVI pa 1000°C ndi 200 Torr.
③ SiC ceramic yomaliza inali ndi kuchuluka kwa 2.95 g/cm³, kutentha kwa 37 W/m·K, ndi mphamvu yopindika ya 297 MPa.
Chithunzi chojambula cha kusindikiza kwa jet yomatira (BJ). (A) Chitsanzo chopangidwa ndi kompyuta (CAD), (B) chithunzi chojambula cha mfundo ya BJ, (C) kusindikiza kwa SiC ndi BJ, (D) kukhuthala kwa SiC ndi kulowa kwa nthunzi ya mankhwala (CVI)
- Stereolithography (SL)
SL ndi ukadaulo wopanga ceramic wochokera ku UV wochiritsa womwe uli ndi luso lopanga bwino kwambiri komanso lovuta kwambiri. Njirayi imagwiritsa ntchito matope a ceramic omwe amakhudzidwa ndi kuwala omwe ali ndi zinthu zolimba komanso kukhuthala kochepa kuti apange matupi obiriwira a ceramic a 3D kudzera mu photopolymerization, kutsatiridwa ndi kuchotsa zomangira ndi kutentha kwambiri kuti mupeze chinthu chomaliza.
Pogwiritsa ntchito slurry ya 35 vol.% SiC, matupi obiriwira apamwamba a 3D adakonzedwa pansi pa kuwala kwa UV kwa 405 nm ndipo adakulitsidwanso kudzera mu kutentha kwa polima pa 800°C ndi chithandizo cha PIP. Zotsatira zake zidawonetsa kuti zitsanzo zomwe zidakonzedwa ndi slurry ya 35 vol.% zidapeza kuchuluka kwa 84.8%, zomwe zidapambana magulu olamulira a 30% ndi 40%.
Mwa kuyambitsa lipophilic SiO₂ ndi phenolic epoxy resin (PEA) kuti asinthe slurry, magwiridwe antchito a photopolymerization adakwera bwino. Pambuyo poyatsa pa 1600°C kwa maola 4, kusintha kwathunthu kukhala SiC kudachitika, ndi mpweya womaliza wa 0.12% yokha, zomwe zidapangitsa kuti pakhale kupanga pang'onopang'ono zinthu za SiC zoyera kwambiri, zopangidwa movuta popanda njira zoyambira kapena zoyambira kulowa.
Chithunzi cha kapangidwe ka kusindikiza ndi njira yake yoyeretsera. Mawonekedwe a chitsanzocho chikauma pa (A) 25°C, pyrolysis pa (B) 1000°C, ndi sintering pa (C) 1600°C.
Mwa kupanga ma slurries a Si₃N₄ ceramic omwe ali ndi kuwala kwa dzuwa kuti asindikize mu 3D stereolithography ndikugwiritsa ntchito njira zochotsera zomangira ndi zosungira kutentha kwambiri, ma ceramic a Si₃N₄ okhala ndi 93.3% theoretical density, mphamvu yokoka ya 279.8 MPa, ndi mphamvu yosinthasintha ya 308.5–333.2 MPa adakonzedwa. Kafukufuku adapeza kuti pansi pa mikhalidwe ya 45 vol.% solid content ndi nthawi yowonekera kwa masekondi 10, matupi obiriwira amtundu umodzi okhala ndi IT77-level curating angapezeke. Njira yochotsera kutentha kochepa yokhala ndi kutentha kwa 0.1 °C/min idathandiza kupanga matupi obiriwira opanda ming'alu.
Kupopera ndi gawo lofunika kwambiri lomwe limakhudza magwiridwe antchito omaliza mu stereolithography. Kafukufuku akuwonetsa kuti kuwonjezera zothandizira kupopera kungawongolere bwino kuchuluka kwa ceramic ndi mawonekedwe a makina. Pogwiritsa ntchito CeO₂ ngati chothandizira kupopera ndi ukadaulo wamagetsi wothandizidwa ndi sintering kuti akonze zombo za Si₃N₄ zopopera, CeO₂ idapezeka kuti imalekanitsa malire a tirigu, zomwe zimapangitsa kuti malire a tirigu azitsetsereka komanso azichulukirachulukira. Zombo za ceramic zomwe zidapezeka zidawonetsa kuuma kwa Vickers kwa HV10/10 (1347.9 ± 2.4) ndi kulimba kwa (6.57 ± 0.07) MPa·m¹/². Ndi MgO–Y₂O₃ ngati zowonjezera, homogeneity ya ceramic microstructure idakula, zomwe zidawonjezera magwiridwe antchito. Pa mulingo wonse wa doping wa 8 wt.%, mphamvu yosinthasintha ndi kutentha zidafika 915.54 MPa ndi 59.58 W·m⁻¹·K⁻¹, motsatana.
VI. Mapeto
Mwachidule, zida za silicon carbide (SiC) zoyera kwambiri, monga zinthu zabwino kwambiri zaukadaulo, zawonetsa mwayi waukulu wogwiritsidwa ntchito mu zida zama semiconductor, ndege, ndi zida zokhazikika kwambiri. Pepala ili linasanthula mwadongosolo njira zisanu zokonzekera zida za SiC zoyera kwambiri—kubwezeretsanso kusungunuka kwa kristalo, kusungunuka kopanda kupanikizika, kukanikiza kotentha, kusungunuka kwa plasma, ndi kupanga zowonjezera—ndi zokambirana zatsatanetsatane pa njira zawo zolemetsa, kukonza magawo ofunikira, magwiridwe antchito azinthu, ndi zabwino ndi zofooka zake.
N'zoonekeratu kuti njira zosiyanasiyana zili ndi makhalidwe apadera pankhani yopezera chiyero chapamwamba, kuchulukana kwambiri, zomangamanga zovuta, komanso kuthekera kwa mafakitale. Ukadaulo wopanga zinthu zowonjezera, makamaka, wasonyeza kuthekera kwakukulu popanga zinthu zooneka ngati zovuta komanso zosinthidwa, ndi kupita patsogolo m'magawo ang'onoang'ono monga stereolithography ndi binder jetting, zomwe zimapangitsa kuti ikhale njira yofunika kwambiri yopangira SiC ceramic yoyera kwambiri.
Kafukufuku wamtsogolo wokhudza kukonzekera kwa SiC ceramic koyera kwambiri ayenera kufufuza mozama, kulimbikitsa kusintha kuchokera ku ntchito zazikulu za labotale kupita ku ntchito zazikulu komanso zodalirika kwambiri zauinjiniya, motero kupereka chithandizo chofunikira kwambiri pakupanga zida zapamwamba komanso ukadaulo wazidziwitso wa m'badwo wotsatira.
XKH ndi kampani yapamwamba kwambiri yomwe imayang'anira kafukufuku ndi kupanga zinthu zadothi zogwira ntchito bwino. Yadzipereka kupereka mayankho okonzedwa ndi makasitomala mu mawonekedwe a silicon carbide (SiC) ceramics yoyera kwambiri. Kampaniyo ili ndi ukadaulo wapamwamba wokonzekera zinthu komanso luso lokonza zinthu molondola. Bizinesi yake ikuphatikiza kafukufuku, kupanga, kukonza zinthu molondola, ndi kukonza pamwamba pa ceramics yoyera kwambiri ya SiC, kukwaniritsa zofunikira za semiconductor, mphamvu zatsopano, ndege ndi madera ena azinthu zadothi zogwira ntchito bwino. Pogwiritsa ntchito njira zoziziritsira zokhwima komanso ukadaulo wopanga zowonjezera, titha kupatsa makasitomala ntchito imodzi kuyambira kukonza njira zopangira zinthu, kupanga kapangidwe kovuta mpaka kukonza zinthu molondola, kuonetsetsa kuti zinthuzo zili ndi mphamvu zabwino kwambiri zamakaniko, kukhazikika kwa kutentha komanso kukana dzimbiri.
Nthawi yotumizira: Julayi-30-2025